Semiconductor system, device and structure

ABSTRACT

An Integrated Circuit device, including: first transistors and second transistors, where the first transistors and the second transistors each include a single crystal channel, where at least one of the second transistors overlays at least one of the first transistors with less than 1 micron distance apart, and where at least one of the second transistors is a dopant segregated schottky barrier transistor.

FIELD OF THE INVENTION

This application relates to the general field of Integrated Circuit (IC)devices and fabrication methods, and more particularly to multilayer orThree Dimensional Integrated Circuit (3D-IC) devices and fabricationmethods.

DISCUSSION OF BACKGROUND ART

Over the past 40 years, there has been a dramatic increase infunctionality and performance of Integrated Circuits (ICs). This haslargely been due to the phenomenon of “scaling”; i.e., component sizeswithin ICs have been reduced (“scaled”) with every successive generationof technology. There are two main classes of components in ComplementaryMetal Oxide Semiconductor (CMOS) ICs, namely transistors and wires. With“scaling”, transistor performance and density typically improve and thishas contributed to the previously-mentioned increases in IC performanceand functionality. However, wires (interconnects) that connect togethertransistors degrade in performance with “scaling”. The situation todayis that wires dominate the performance, functionality and powerconsumption of ICs.

3D stacking of semiconductor devices or chips is one avenue to tacklethe wire issues. By arranging transistors in 3 dimensions instead of 2dimensions (as was the case in the 1990s), the transistors in ICs can beplaced closer to each other. This reduces wire lengths and keeps wiringdelay low.

There are many techniques to construct 3D stacked integrated circuits orchips including:

-   -   Through-silicon via (TSV) technology: Multiple layers of        transistors (with or without wiring levels) can be constructed        separately. Following this, they can be bonded to each other and        connected to each other with through-silicon vias (TSVs).    -   Monolithic 3D technology: With this approach, multiple layers of        transistors and wires can be monolithically constructed. Some        monolithic 3D and 3DIC approaches are described in U.S. Pat.        Nos. 8,273,610, 8,557,632, 8,298,875, 8,642,416, 8,362,482,        8,378,715, 8,379,458, 8,450,804, 8,476,145, 8,536,023,        8,574,929, 8,581,349, 8,642,416, 8,687,399, 8,742,476,        8,674,470, 8,803,206, 8,836,073, 8,902,663, 8,994,404,        9,021,414, 9,023,688, 9,030,858, 9,117,749, 9,142,553,        9,219,005, 9,385,088, 9,406,670, 9,460,978, 9,509,313; U.S.        patent application publications 2011/0092030, 2016/0218046; and        pending U.S. patent application Ser. Nos. 14/607,077,        14/642,724, 62/307,568, 62/297,857, 15/095,187, 15/150,395,        15/173,686, 62/383,463, 62/440,720, 62/443,751, 15/243,941,        PCT/US16/52726, 62/406,376, 62/432,575, 62/440,720, 62/297,857,        15/333,138, 15/344,562, and 15/351,389. The entire contents of        the foregoing patents, publications, and applications are        incorporated herein by reference.

Electro-Optics: There is also work done for integrated monolithic 3Dincluding layers of different crystals, such as U.S. Pat. Nos.8,283,215, 8,163,581, 8,753,913, 8,823,122, 9,197,804, 9,419,031; andU.S. patent application publication 2016/0064439. The entire contents ofthe foregoing patents, publications, and applications are incorporatedherein by reference.

Regardless of the technique used to construct 3D stacked integratedcircuits or chips, heat removal is a serious issue for this technology.For example, when a layer of circuits with power density P is stackedatop another layer with power density P, the net power density is 2P.Removing the heat produced due to this power density is a significantchallenge. In addition, many heat producing regions in 3D stackedintegrated circuits or chips have a high thermal resistance to the heatsink, and this makes heat removal even more difficult.

Several solutions have been proposed to tackle this issue of heatremoval in 3D stacked integrated circuits and chips. These are describedin the following paragraphs.

Publications have suggested passing liquid coolant through multipledevice layers of a 3D-IC to remove heat. This is described in“Microchannel Cooled 3D Integrated Systems”, Proc. Intl. InterconnectTechnology Conference, 2008 by D. C. Sekar, et al., and “ForcedConvective Interlayer Cooling in Vertically Integrated Packages,” Proc.Intersoc. Conference on Thermal Management (ITHERM), 2008 by T.Brunschweiler, et al.

Thermal vias have been suggested as techniques to transfer heat fromstacked device layers to the heat sink. Use of power and ground vias forthermal conduction in 3D-ICs has also been suggested. These techniquesare described in “Allocating Power Ground Vias in 3D ICs forSimultaneous Power and Thermal Integrity” ACM Transactions on DesignAutomation of Electronic Systems (TODAES), May 2009 by Hao Yu, Joanna Hoand Lei He.

Other techniques to remove heat from 3D Integrated Circuits and Chipswill be beneficial.

Additionally the 3D technology according to some embodiments of theinvention may enable some very innovative IC alternatives with reduceddevelopment costs, increased yield, and other illustrative benefits.

SUMMARY

The invention may be directed to multilayer or Three DimensionalIntegrated Circuit (3D IC) devices and fabrication methods.

In one aspect, an Integrated Circuit device, comprising: firsttransistors and second transistors, wherein said first transistors andsaid second transistors each comprise a single crystal channel, whereinat least one of said second transistors overlays at least one of saidfirst transistors with less than 1 micron distance apart, and wherein atleast one of said second transistors is a dopant segregated schottkybarrier transistor.

In another aspect, an Integrated Circuit device, comprising: firsttransistors and second transistors, wherein said first transistors andsaid second transistors each comprise a single crystal channel, whereinat least one of said second transistors overlays at least one of saidfirst transistors with less than 1 micron distance apart, wherein atleast one of said second transistors is a double gate transistor, andwherein each gate of said double gate transistor is independentlycontrolled.

In another aspect, an Integrated Circuit device, comprising: firsttransistors and second transistors, wherein said first transistors andsaid second transistors each comprise a single crystal channel, andwherein at least one of said second transistors overlays at least one ofsaid first transistors with less than 1 micron distance apart, andfurther comprising: third transistors, wherein at least one of saidthird transistors overlays at least one of said second transistors withless than 1 micron distance apart, wherein said second transistors are apart of a memory structure, wherein a portion of said third transistorsis part of a control circuit for said memory structure, and wherein atleast one of said third transistors is an SOI transistor.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the invention will be understood and appreciatedmore fully from the following detailed description, taken in conjunctionwith the drawings in which:

FIGS. 1A-1E depicts a layer transfer flow using ion-cut in which a toplayer of doped Si is layer transferred atop a generic bottom layer;

FIGS. 2A-2K show a zero-mask per layer 3D floating body DRAM;

FIGS. 3A-3J show a zero-mask per layer 3D resistive memory with ajunction-less transistor;

FIGS. 4A-4K show an alternative zero-mask per layer 3D resistive memory;

FIGS. 5A-5G show a zero-mask per layer 3D charge-trap memory;

FIGS. 6A-6C illustrates a technique to construct dopant segregatedtransistors compatible with 3D stacking;

FIG. 7 is an exemplary drawing illustration of a partitioning of acircuit design into three layers of a 3D-IC;

FIG. 8 is an exemplary drawing illustration of a carrier substrate withan integrated heat sink/spreader and/or optically reflective layer;

FIGS. 9A-9F are exemplary drawing illustrations of a process flow formanufacturing fully depleted Recessed Channel Array Transistors(FD-RCAT);

FIGS. 10A-10F are exemplary drawing illustrations of the integration ofa shield/heat sink layer in a 3D-IC; and

FIGS. 11A-11G are exemplary drawing illustrations of a process flow formanufacturing fully depleted Recessed Channel Array Transistors(FD-RCAT) with an integrated shield/heat sink layer.

DETAILED DESCRIPTION

An embodiment of the invention is now described with reference to thedrawing figures. Persons of ordinary skill in the art will appreciatethat the description and figures illustrate rather than limit theinvention and that in general the figures are not drawn to scale forclarity of presentation. Such skilled persons will also realize thatmany more embodiments are possible by applying the inventive principlescontained herein and that such embodiments fall within the scope of theinvention which is not to be limited except by the appended claims.

Some drawing figures may describe process flows for building devices.These process flows, which may be a sequence of steps for building adevice, may have many structures, numerals and labels that may be commonbetween two or more adjacent steps. In such cases, some labels, numeralsand structures used for a certain step's figure may have been describedin the previous steps' figures.

FIGS. 1A-1E describes an ion-cut flow for layer transferring a singlecrystal silicon layer atop any generic bottom layer 102. The bottomlayer 102 can be a single crystal silicon layer. Alternatively, it canbe a wafer having transistors with wiring layers above it. This processof ion-cut based layer transfer may include several steps, as describedin the following sequence:

Step (A): A silicon dioxide layer 104 is deposited above the genericbottom layer 102. FIG. 1A illustrates the structure after Step (A) iscompleted.

Step (B): The top layer of doped or undoped silicon 106 to betransferred atop the bottom layer is processed and an oxide layer 108 isdeposited or grown above it. FIG. 1B illustrates the structure afterStep (B) is completed.

Step (C): Hydrogen is implanted into the top layer silicon 106 with thepeak at a certain depth to create the hydrogen plane 110. Alternatively,another atomic species such as helium or boron can be implanted orco-implanted. FIG. 1C illustrates the structure after Step (C) iscompleted.

Step (D): The top layer wafer shown after Step (C) is flipped and bondedatop the bottom layer wafer using oxide-to-oxide bonding. FIG. 1Dillustrates the structure after Step (D) is completed.

Step (E): A cleave operation is performed at the hydrogen plane 110using an anneal. Alternatively, a sideways mechanical force may be used.Further details of this cleave process are described in “Frontiers ofsilicon-on-insulator,” J. Appl. Phys. 93, 4955-4978 (2003) by G. K.Celler and S. Cristoloveanu (“Celler”) and “Mechanically induced Silayer transfer in hydrogen-implanted Si wafers,” Appl. Phys. Lett., vol.76, pp. 1370-1372, 1000 by K. Henttinen, I. Suni, and S. S. Lau(“Hentinnen”). Following this, a Chemical-Mechanical-Polish (CMP) isdone. FIG. 1E illustrates the structure after Step (E) is completed.

FIG. 2A-K describe an alternative process flow to construct ahorizontally-oriented monolithic 3D DRAM. This monolithic 3D DRAMutilizes the floating body effect and double-gate transistors. No maskis utilized on a “per-memory-layer” basis for the monolithic 3D DRAMconcept shown in FIG. 2A-K, and all other masks are shared betweendifferent layers. The process flow may include several steps in thefollowing sequence.

Step (A): Peripheral circuits with tungsten wiring 202 are firstconstructed and above this oxide layer 204 is deposited. FIG. 2A shows adrawing illustration after Step (A).

Step (B): FIG. 2B illustrates the structure after Step (B). A p− Siliconwafer 208 has an oxide layer 206 grown or deposited above it. Followingthis, hydrogen is implanted into the p− Silicon wafer at a certain depthindicated by 214. Alternatively, some other atomic species such asHelium could be (co-)implanted. This hydrogen implanted p− Silicon wafer208 forms the top layer 210. The bottom layer 212 may include theperipheral circuits 202 with oxide layer 204. The top layer 210 isflipped and bonded to the bottom layer 212 using oxide-to-oxide bonding.

Step (C): FIG. 2C illustrates the structure after Step (C). The stack oftop and bottom wafers after Step (B) is cleaved at the hydrogen plane214 using either a anneal or a sideways mechanical force or other means.A CMP process is then conducted. A layer of silicon oxide 218 is thendeposited atop the p− Silicon layer 216. At the end of this step, asingle-crystal p− Silicon layer 216 exists atop the peripheral circuits,and this has been achieved using layer-transfer techniques.

Step (D): FIG. 2D illustrates the structure after Step (D). Usingmethods similar to Step (B) and (C), multiple p− silicon layers 220 areformed with silicon oxide layers in between.

Step (E): FIG. 2E illustrates the structure after Step (E). Lithographyand etch processes are then utilized to make a structure as shown in thefigure.

Step (F): FIG. 2F illustrates the structure after Step (F). Gatedielectric 226 and gate electrode 224 are then deposited following whicha CMP is done to planarize the gate electrode 224 regions. Lithographyand etch are utilized to define gate regions.

Step (G): FIG. 2G illustrates the structure after Step (G). Using thehard mask defined in Step (F), p− regions not covered by the gate areimplanted to form n+ regions. Spacers are utilized during thismulti-step implantation process and layers of silicon present indifferent layers of the stack have different spacer widths to accountfor lateral straggle of buried layer implants. Bottom layers could havelarger spacer widths than top layers. A thermal annealing step, such asa RTA or spike anneal or laser anneal or flash anneal, is then conductedto activate n+ doped regions.

Step (H): FIG. 2H illustrates the structure after Step (H). A siliconoxide layer 230 is then deposited and planarized. For clarity, thesilicon oxide layer is shown transparent, along with word-line (WL) 232and source-line (SL) 234 regions.

Step (I): FIG. 2I illustrates the structure after Step (I). Bit-line(BL) contacts 236 are formed by etching and deposition. These BLcontacts are shared among all layers of memory.

Step (J): FIG. 2J illustrates the structure after Step (J). BLs 238 arethen constructed. Contacts are made to BLs, WLs and SLs of the memoryarray at its edges. SL contacts can be made into stair-like structuresusing techniques described in “Bit Cost Scalable Technology with Punchand Plug Process for Ultra High Density Flash Memory,” VLSI Technology,2007 IEEE Symposium on, vol., no., pp. 14-15, 12-14 Jun. 2007 by Tanaka,H.; Kido, M.; Yahashi, K.; Oomura, M.; et al., following which contactscan be constructed to them. Formation of stair-like structures for SLscould be done in steps prior to Step (J) as well.

FIG. 2K shows cross-sectional views of the array for clarity.Double-gated transistors may be utilized along with the floating bodyeffect for storing information.

A floating-body DRAM has thus been constructed, with (1)horizontally-oriented transistors—i.e. current flowing in substantiallythe horizontal direction in transistor channels (2) some of the memorycell control lines, e.g., source-lines SL, constructed of heavily dopedsilicon and embedded in the memory cell layer, (3) side gatessimultaneously deposited over multiple memory layers, and (4)monocrystalline (or single-crystal) silicon layers obtained by layertransfer techniques such as ion-cut.

While many of today's memory technologies rely on charge storage,several companies are developing non-volatile memory technologies basedon resistance of a material changing. Examples of these resistance-basedmemories include phase change memory, Metal Oxide memory, resistive RAM(RRAM), memristors, solid-electrolyte memory, ferroelectric RAM,conductive bridge RAM, and MRAM. Background information on theseresistive-memory types is given in “Overview of candidate devicetechnologies for storage-class memory,” IBM Journal of Research andDevelopment, vol. 52, no. 4.5, pp. 449-464, July 2008 by Burr, G. W.;Kurdi, B. N.; Scott, J. C.; Lam, C. H.; Gopalakrishnan, K.; Shenoy, R.S.

FIG. 3A-J describe a novel memory architecture for resistance-basedmemories, and a procedure for its construction. The memory architectureutilizes junction-less transistors and has a resistance-based memoryelement in series with a transistor selector. No mask is utilized on a“per-memory-layer” basis for the monolithic 3D resistance change memory(or resistive memory) concept shown in FIG. 3A-J, and all other masksare shared between different layers. The process flow may includeseveral steps that occur in the following sequence.

Step (A): Peripheral circuits 302 are first constructed and above thisoxide layer 304 is deposited. FIG. 3A shows a drawing illustration afterStep (A).

Step (B): FIG. 3B illustrates the structure after Step (B). N+ Siliconwafer 308 has an oxide layer 306 grown or deposited above it. Followingthis, hydrogen is implanted into the n+ Silicon wafer at a certain depthindicated by 314. Alternatively, some other atomic species such asHelium could be (co-)implanted. This hydrogen implanted n+ Silicon wafer308 forms the top layer 310. The bottom layer 312 may include theperipheral circuits 302 with oxide layer 304. The top layer 310 isflipped and bonded to the bottom layer 312 using oxide-to-oxide bonding.

Step (C): FIG. 3C illustrates the structure after Step (C). The stack oftop and bottom wafers after Step (B) is cleaved at the hydrogen plane314 using either a anneal or a sideways mechanical force or other means.A CMP process is then conducted. A layer of silicon oxide 318 is thendeposited atop the n+ Silicon layer 316. At the end of this step, asingle-crystal n+ Si layer 316 exists atop the peripheral circuits, andthis has been achieved using layer-transfer techniques.

Step (D): FIG. 3D illustrates the structure after Step (D). Usingmethods similar to Step (B) and (C), multiple n+ silicon layers 320 areformed with silicon oxide layers in between.

Step (E): FIG. 3E illustrates the structure after Step (E). Lithographyand etch processes are then utilized to make a structure as shown in thefigure.

Step (F): FIG. 3F illustrates the structure after Step (F). Gatedielectric 326 and gate electrode 324 are then deposited following whicha CMP is performed to planarize the gate electrode 324 regions.Lithography and etch are utilized to define gate regions.

Step (G): FIG. 3G illustrates the structure after Step (G). A siliconoxide layer 330 is then deposited and planarized. The silicon oxidelayer is shown transparent in the figure for clarity, along withword-line (WL) 332 and source-line (SL) 334 regions.

Step (H): FIG. 3H illustrates the structure after Step (H). Vias areetched through multiple layers of silicon and silicon dioxide as shownin the figure. A resistance change memory material 336 is then deposited(preferably with atomic layer deposition (ALD)). Examples of such amaterial include hafnium oxide, well known to change resistance byapplying voltage. An electrode for the resistance change memory elementis then deposited (preferably using ALD) and is shown as electrode/BLcontact 340. A CMP process is then conducted to planarize the surface.It can be observed that multiple resistance change memory elements inseries with junction-less transistors are created after this step.

Step (I): FIG. 3I illustrates the structure after Step (I). BLs 338 arethen constructed. Contacts are made to BLs, WLs and SLs of the memoryarray at its edges. SL contacts can be made into stair-like structuresusing techniques described in in “Bit Cost Scalable Technology withPunch and Plug Process for Ultra High Density Flash Memory,” VLSITechnology, 2007 IEEE Symposium on, vol., no., pp. 14-15, 12-14 Jun.2007 by Tanaka, H.; Kido, M.; Yahashi, K.; Oomura, M.; et al., followingwhich contacts can be constructed to them. Formation of stair-likestructures for SLs could be achieved in steps prior to Step (I) as well.

FIG. 3J shows cross-sectional views of the array for clarity.

A 3D resistance change memory has thus been constructed, with (1)horizontally-oriented transistors—i.e. current flowing in substantiallythe horizontal direction in transistor channels, (2) some of the memorycell control lines, e.g., source-lines SL, constructed of heavily dopedsilicon and embedded in the memory cell layer, (3) side gates that aresimultaneously deposited over multiple memory layers for transistors,and (4) monocrystalline (or single-crystal) silicon layers obtained bylayer transfer techniques such as ion-cut.

FIG. 4A-K describe an alternative process flow to construct ahorizontally-oriented monolithic 3D resistive memory array. Thisembodiment has a resistance-based memory element in series with atransistor selector. No mask is utilized on a “per-memory-layer” basisfor the monolithic 3D resistance change memory (or resistive memory)concept shown in FIG. 4A-K, and all other masks are shared betweendifferent layers. The process flow may include several steps asdescribed in the following sequence.

Step (A): Peripheral circuits with tungsten wiring 402 are firstconstructed and above this oxide layer 404 is deposited. FIG. 4A shows adrawing illustration after Step (A).

Step (B): FIG. 4B illustrates the structure after Step (B). A p− Siliconwafer 408 has an oxide layer 406 grown or deposited above it. Followingthis, hydrogen is implanted into the p− Silicon wafer at a certain depthindicated by 414. Alternatively, some other atomic species such asHelium could be (co-)implanted. This hydrogen implanted p− Silicon wafer408 forms the top layer 410. The bottom layer 412 may include theperipheral circuits 402 with oxide layer 404. The top layer 410 isflipped and bonded to the bottom layer 412 using oxide-to-oxide bonding.

Step (C): FIG. 4C illustrates the structure after Step (C). The stack oftop and bottom wafers after Step (B) is cleaved at the hydrogen plane414 using either a anneal or a sideways mechanical force or other means.A CMP process is then conducted. A layer of silicon oxide 418 is thendeposited atop the p− Silicon layer 416. At the end of this step, asingle-crystal p− Silicon layer 416 exists atop the peripheral circuits,and this has been achieved using layer-transfer techniques.

Step (D): FIG. 4D illustrates the structure after Step (D). Usingmethods similar to Step (B) and (C), multiple p− silicon layers 420 areformed with silicon oxide layers in between.

Step (E): FIG. 4E illustrates the structure after Step (E). Lithographyand etch processes are then utilized to make a structure as shown in thefigure.

Step (F): FIG. 4F illustrates the structure on after Step (F). Gatedielectric 426 and gate electrode 424 are then deposited following whicha CMP is done to planarize the gate electrode 424 regions. Lithographyand etch are utilized to define gate regions.

Step (G): FIG. 4G illustrates the structure after Step (G). Using thehard mask defined in Step (F), p− regions not covered by the gate areimplanted to form n+ regions. Spacers are utilized during thismulti-step implantation process and layers of silicon present indifferent layers of the stack have different spacer widths to accountfor lateral straggle of buried layer implants. Bottom layers could havelarger spacer widths than top layers. A thermal annealing step, such asa RTA or spike anneal or laser anneal or flash anneal, is then conductedto activate n+ doped regions.

Step (H): FIG. 4H illustrates the structure after Step (H). A siliconoxide layer 430 is then deposited and planarized. The silicon oxidelayer is shown transparent in the figure for clarity, along withword-line (WL) 432 and source-line (SL) 434 regions.

Step (I): FIG. 4I illustrates the structure after Step (I). Vias areetched through multiple layers of silicon and silicon dioxide as shownin the figure. A resistance change memory material 436 is then deposited(preferably with atomic layer deposition (ALD)). Examples of such amaterial include hafnium oxide, which is well known to change resistanceby applying voltage. An electrode for the resistance change memoryelement is then deposited (preferably using ALD) and is shown aselectrode/BL contact 440. A CMP process is then conducted to planarizethe surface. It can be observed that multiple resistance change memoryelements in series with transistors are created after this step.

Step (J): FIG. 4J illustrates the structure after Step (J). BLs 438 arethen constructed. Contacts are made to BLs, WLs and SLs of the memoryarray at its edges. SL contacts can be made into stair-like structuresusing techniques described in “Bit Cost Scalable Technology with Punchand Plug Process for Ultra High Density Flash Memory,” VLSI Technology,2007 IEEE Symposium on, vol., no., pp. 14-15, 12-14 Jun. 2007 by Tanaka,H.; Kido, M.; Yahashi, K.; Oomura, M.; et al., following which contactscan be constructed to them. Formation of stair-like structures for SLscould be done in steps prior to Step (I) as well.

FIG. 4K shows cross-sectional views of the array for clarity.

A 3D resistance change memory has thus been constructed, with (1)horizontally-oriented transistors—i.e. current flowing in substantiallythe horizontal direction in transistor channels, (2) some of the memorycell control lines—e.g., source-lines SL, constructed of heavily dopedsilicon and embedded in the memory cell layer, (3) side gatessimultaneously deposited over multiple memory layers for transistors,and (4) monocrystalline (or single-crystal) silicon layers obtained bylayer transfer techniques such as ion-cut.

While resistive memories described previously form a class ofnon-volatile memory, others classes of non-volatile memory exist. NANDflash memory forms one of the most common non-volatile memory types. Itcan be constructed of two main types of devices: floating-gate deviceswhere charge is stored in a floating gate and charge-trap devices wherecharge is stored in a charge-trap layer such as Silicon Nitride.Background information on charge-trap memory can be found in “IntegratedInterconnect Technologies for 3D Nanoelectronic Systems”, Artech House,2009 by Bakir and Meindl (“Balch”) and “A Highly Scalable 8-Layer 3DVertical-Gate (VG) TFT NAND Flash Using Junction-Free Buried ChannelBE-SONOS Device,” Symposium on VLSI Technology, 2010 by Hang-Ting Lue,et al. The architectures shown in FIG. 5A-G are relevant for any type ofcharge-trap memory.

FIG. 5A-G describes a memory architecture for single-crystal 3Dcharge-trap memories, and a procedure for its construction. It utilizesjunction-less transistors. No mask is utilized on a “per-memory-layer”basis for the monolithic 3D charge-trap memory concept shown in FIG.5A-G, and all other masks are shared between different layers. Theprocess flow may include several steps as described in the followingsequence.

Step (A): Peripheral circuits 502 are first constructed and above thisoxide layer 504 is deposited. FIG. 5A shows a drawing illustration afterStep (A).

Step (B): FIG. 5B illustrates the structure after Step (B). A wafer ofn+ Silicon 508 has an oxide layer 506 grown or deposited above it.Following this, hydrogen is implanted into the n+ Silicon wafer at acertain depth indicated by 514. Alternatively, some other atomic speciessuch as Helium could be implanted. This hydrogen implanted n+ Siliconwafer 508 forms the top layer 510. The bottom layer 512 may include theperipheral circuits 502 with oxide layer 504. The top layer 510 isflipped and bonded to the bottom layer 512 using oxide-to-oxide bonding.Alternatively, n+ silicon wafer 508 may be doped differently, such as,for example, with elemental species that form a p+, or p−, or n− siliconwafer, or substantially absent of semiconductor dopants to form anundoped silicon wafer.

Step (C): FIG. 5C illustrates the structure after Step (C). The stack oftop and bottom wafers after Step (B) is cleaved at the hydrogen plane514 using either a anneal or a sideways mechanical force or other means.A CMP process is then conducted. A layer of silicon oxide 518 is thendeposited atop the n+ Silicon layer 516. At the end of this step, asingle-crystal n+ Si layer 516 exists atop the peripheral circuits, andthis has been achieved using layer-transfer techniques.

Step (D): FIG. 5D illustrates the structure after Step (D). Usingmethods similar to Step (B) and (C), multiple n+ silicon layers 520 areformed with silicon oxide layers in between.

Step (E): FIG. 5E illustrates the structure after Step (E). Lithographyand etch processes are then utilized to make a structure as shown in thefigure.

Step (F): FIG. 5F illustrates the structure after Step (F). Gatedielectric 526 and gate electrode 524 are then deposited following whicha CMP is done to planarize the gate electrode 524 regions. Lithographyand etch are utilized to define gate regions. Gates of the NAND string536 as well gates of select gates of the NAND string 538 are defined.

Step (G): FIG. 5G illustrates the structure after Step (G). A siliconoxide layer 530 is then deposited and planarized. It is showntransparent in the figure for clarity. Word-lines, bit-lines andsource-lines are defined as shown in the figure. Contacts are formed tovarious regions/wires at the edges of the array as well. SL contacts canbe made into stair-like structures using techniques described in “BitCost Scalable Technology with Punch and Plug Process for Ultra HighDensity Flash Memory,” VLSI Technology, 2007 IEEE Symposium on, vol.,no., pp. 14-15, 12-14 Jun. 2007 by Tanaka, H.; Kido, M.; Yahashi, K.;Oomura, M.; et al., following which contacts can be constructed to them.Formation of stair-like structures for SLs could be performed in stepsprior to Step (G) as well.

A 3D charge-trap memory has thus been constructed, with (1)horizontally-oriented transistors—i.e. current flowing in substantiallythe horizontal direction in transistor channels, (2) some of the memorycell control lines—e.g., bit lines BL, constructed of heavily dopedsilicon and embedded in the memory cell layer, (3) side gatessimultaneously deposited over multiple memory layers for transistors,and (4) monocrystalline (or single-crystal) silicon layers obtained bylayer transfer techniques such as ion-cut. This use of single-crystalsilicon obtained with ion-cut is a key differentiator from past work on3D charge-trap memories such as “A Highly Scalable 8-Layer 3DVertical-Gate (VG) TFT NAND Flash Using Junction-Free Buried ChannelBE-SONOS Device,” Symposium on VLSI Technology, 2010 by Hang-Ting Lue,et al. that used polysilicon.

An alternate method to obtain low temperature 3D compatible CMOStransistors residing in the same device layer of silicon is illustratedin FIG. 6A-C. As illustrated in FIG. 6A, a layer of p− monocrystallinesilicon 602 may be transferred onto a bottom layer of transistors andwires 600 utilizing previously described layer transfer techniques. Asillustrated in FIG. 6C, n-type well regions 604 and p-type well regions606 may be formed by conventional lithographic and ion implantationtechniques. An oxide layer 608 may be grown or deposited prior to orafter the lithographic and ion implantation steps. The dopants may beactivated with a low wavelength optical anneal, such as a 550 nm laseranneal system manufactured by Applied Materials, that will not heat upthe bottom layer of transistors and wires 600 beyond approximately 400°C., the temperature at which damage to the barrier metals containing thecopper wiring of bottom layer of transistors and wires 600 may occur. Atthis step in the process flow, there is very little structure pattern inthe top layer of silicon, which allows the effective use of the lowerwavelength optical annealing systems, which are prone to patternsensitivity issues thereby creating uneven heating. As illustrated inFIG. 6C, shallow trench regions 624 may be formed, and conventional CMOStransistor formation methods with dopant segregation techniques,including those previously described, may be utilized to construct CMOStransistors, including n-silicon regions 614, P+ silicon regions 628,silicide regions 626, PMOS gate stacks 634, p-silicon regions 616, N+silicon regions 620, silicide regions 622, and NMOS gate stacks 632.

Persons of ordinary skill in the art will appreciate that the lowtemperature 3D compatible CMOS transistor formation method andtechniques described in FIG. 6 may also utilize tungsten wiring for thebottom layer of transistors and wires 600 thereby increasing thetemperature tolerance of the optical annealing utilized in FIG. 6B or6C. Moreover, absorber layers, such as amorphous carbon, reflectivelayers, such as aluminum, or Brewster angle adjustments to the opticalannealing may be utilized to optimize the implant activation andminimize the heating of lower device layers. Further, shallow trenchregions 624 may be formed prior to the optical annealing orion-implantation steps. Furthermore, channel implants may be performedprior to the optical annealing so that transistor characteristics may bemore tightly controlled. Moreover, one or more of the transistorchannels may be undoped by layer transferring an undoped layer ofmonocrystalline silicon in place of the layer of p− monocrystallinesilicon 602. Further, the source and drain implants may be performedprior to the optical anneals. Moreover, the methods utilized in FIG. 6may be applied to create other types of transistors, such asjunction-less transistors or recessed channel transistors. Further, theFIG. 6 methods may be applied in conjunction with the hydrogen plasmaactivation techniques previously described in this document. Thus theinvention is to be limited only by the appended claims.

Persons of ordinary skill in the art will appreciate that when multiplelayers of doped or undoped single crystal silicon and an insulator, suchas, for example, silicon dioxide, are formed as described above (e.g.additional Si/SiO2 layers 3024 and 3026 and first Si/SiO2 layer 3022 ofincorporated references application Ser. No. 15/201,430 and U.S. Pat.No. 9,385,088), that there are many other circuit elements which may beformed, such as, for example, capacitors and inductors, by subsequentprocessing. Moreover, it will also be appreciated by persons of ordinaryskill in the art that the thickness and doping of the single crystalsilicon layer wherein the circuit elements, such as, for example,transistors, are formed, may provide a fully depleted device structure,a partially depleted device structure, or a substantially bulk devicestructure substrate for each layer of a 3D IC or the single layer of a2D IC.

Alternatively, another process could be used for forming activatedsource-drain regions. Dopant segregation techniques (DST) may beutilized to efficiently modulate the source and drain Schottky barrierheight for both p and n type junctions. Metal or metals, such asplatinum and nickel, may be deposited, and a silicide, such asNi0.9Pt0.1Si, may formed by thermal treatment or an optical treatment,such as a laser anneal, following which dopants for source and drainregions may be implanted, such as arsenic and boron, and the dopantpile-up is initiated by a low temperature post-silicidation activationstep, such as a thermal treatment or an optical treatment, such as alaser anneal. An alternate DST is as follows: Metal or metals, such asplatinum and nickel, may be deposited, following which dopants forsource and drain regions may be implanted, such as arsenic and boron,followed by dopant segregation induced by the silicidation thermalbudget wherein a silicide, such as Ni0.9Pt0.1Si, may formed by thermaltreatment or an optical treatment, such as a laser anneal.Alternatively, dopants for source and drain regions may be implanted,such as arsenic and boron, following which metal or metals, such asplatinum and nickel, may be deposited, and a silicide, such asNi0.9Pt0.1Si, may formed by thermal treatment or an optical treatment,such as a laser anneal. Further details of these processes for formingdopant segregated source-drain regions are described in “Low TemperatureImplementation of Dopant-Segregated Band-edger Metallic S/D junctions inThin-Body SOI p-MOSFETs”, Proceedings IEDM, 2007, pp 147-150, by G.Larrieu, et al.; “A Comparative Study of Two Different Schemes to DopantSegregation at NiSi/Si and PtSi/Si Interfaces for Schottky BarrierHeight Lowering”, IEEE Transactions on Electron Devices, vol. 55, no. 1,January 2008, pp. 396-403, by Z. Qiu, et al.; and “High-k/Metal-GateFully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain WithSub-30-nm Gate Length”, IEEE Electron Device Letters, vol. 31, no. 4,April 2010, pp. 275-277, by M. H. Khater, et al.

This embodiment of the invention advantageously uses thislow-temperature source-drain formation technique and layer transfertechniques and produces 3D integrated circuits and chips.

Three dimensional devices offer a new possibility of partitioningdesigns into multiple layers or strata based various criteria, such as,for example, routing demands of device blocks in a design, lithographicprocess nodes, speed, cost, and density. Many of the criteria areillustrated in at least FIGS. 13, 210-215, and 239 and relatedspecification sections in U.S. Patent Application Publication2012/0129301 (allowed U.S. patent application Ser. No. 13/273,712, nowU.S. Pat. No. 8,273,610), the contents are incorporated herein byreference. An additional criterion for partitioning decision-making maybe one of trading cost for process complexity/attainment. For example,spacer based patterning techniques, wherein a lithographic criticaldimension can be replicated smaller than the original image by single ormultiple spacer depositions, spacer etches, and subsequent image(photoresist or prior spacer) removal, are becoming necessary in theindustry to pattern smaller line-widths while still using the longerwavelength steppers and imagers. Other double, triple, and quadpatterning techniques, such as pattern and cut, may also be utilized toovercome the lithographic constraints of the current imaging equipment.However, the spacer based and multiple pattering techniques areexpensive to process and yield, and generally may be constraining todesign and layout: they generally require regular patterns, sometimessubstantially all parallel lines. An embodiment of the invention is topartition a design into those blocks and components that may be amenableand efficiently constructed by the above expensive patterning techniquesonto one or more layers in the 3D-IC, and partition the other blocks andcomponents of the design onto different layers in the 3D-IC. Asillustrated in FIG. 7, third layer of circuits and transistors 704 maybe stacked on top of second layer of circuits and transistors 702, whichmay be stacked on top of first layer/substrate of circuits andtransistors 700. The formation of, stacking, and interconnect within andbetween the three layers may be done by techniques described herein, inthe incorporated by reference documents, or any other 3DIC stackingtechnique that can form vertical interconnects of a density greater than10,000 vias/cm². Partitioning of the overall device between the threelayers may, for example, consist of the first layer/substrate ofcircuits and transistors 700 including the portion of the overall designwherein the blocks and components do not require the expensivepatterning techniques discussed above; and second layer of circuits andtransistors 702 may include a portion of the overall design wherein theblocks and components require the expensive patterning techniquesdiscussed above, and may be aligned in, for example, the ‘x’ direction,and third layer of circuits and transistors 704 may include a portion ofthe overall design wherein the blocks and components require theexpensive patterning techniques discussed above, and may be aligned in adirection different from second layer of circuits and transistors 702,for example, the ‘y’ direction (perpendicular to the second layer'spattern). The partitioning constraint discussed above related to processcomplexity/attainment may be utilized in combination with otherpartitioning constraints to provide an optimized fit to the design'slogic and cost demands. For example, the procedure and algorithm(illustrated in FIG. 239 and related specification found in thereferenced patent document) to partition a design into two targettechnologies may be adapted to also include the constraints andcriterion described herein FIG. 7.

Ion implantation damage repair, and transferred layer annealing, such asactivating doping, may utilize carrier wafer liftoff techniques asillustrated in at least FIGS. 184-189 and related specification sectionsin U.S. Patent Application Publication 2012/0129301 (allowed U.S. patentapplication Ser. No. 13/273,712, now U.S. Pat. No. 8,273,610), thecontents are incorporated herein by reference. High temperature glasscarrier substrates/wafers may be utilized, but may locally bestructurally damaged or de-bond from the layer being annealed whenexposed to LSA (laser spike annealing) or other optical annealtechniques that may locally exceed the softening or outgassingtemperature threshold of the glass carrier. An embodiment of theinvention is to improve the heat-sinking capability and structuralstrength of the glass carrier by inserting a layer of a material thatmay have a greater heat capacity and/or heat spreading capability thanglass or fused quartz, and may have an optically reflective property,for example, aluminum, tungsten or forms of carbon such as carbonnanotubes. As illustrated in FIG. 8, carrier substrate 899 may includesubstrate 800, heat sink reflector material 802, bonding material 804,and desired transfer layer 806. Substrate 800 may include, for example,monocrystalline silicon wafers, high temperature glass or fused quartzwafers/substrates, germanium wafers, InP wafers, or high temperaturepolymer substrates. Substrate 800 may have a thickness greater thanabout 50 um, such as 100 um, 1000 um, 1 mm, 2 mm, 5 mm to supplystructural integrity for the subsequent processing. Heat sink reflectormaterial 802 may include material that may have a greater heat capacityand/or heat spreading capability than glass or fused quartz, and mayhave an optically reflective property, for example, aluminum, tungsten,silicon based silicides, or forms of carbon such as carbon nanotubes.Bonding material 804 may include silicon oxides, indium tin oxides,fused quartz, high temperature glasses, and other optically transparentto the LSA beam or optical annealing wavelength materials. Bondingmaterial 804 may have a thickness greater than about 5 nm, such as 10nm, 20 nm, 100 nm, 200 nm, 300 nm, 500 nm. Desired transfer layer 806may include any layer transfer devices and/or layer or layers containedherein this document or the referenced document, for example, thegate-last partial transistor layers, DRAM Si/SiO2 layers, sub-stacklayers of circuitry, RCAT doped layers, or starting material dopedmonocrystalline silicon. Carrier substrate 899 may be exposed to anoptical annealing beam, such as, for example, a laser-spike anneal beamfrom a commercial semiconductor material oriented single or dual-beamlaser spike anneal DB-LSA system of Ultratech Inc., San Jose, Calif.,USA or a short pulse laser (such as 160 ns), with 308 nm wavelength,such as offered by Excico of Gennevilliers, France. Optical anneal beam808 may locally heat desired transfer layer 806 to anneal defects and/oractivate dopants. The portion of the optical anneal beam 808 that is notabsorbed by desired transfer layer 806 may pass through bonding material804 and be absorbed and or reflected by heat sink reflector material802. This may increase the efficiency of the optical anneal/activationof desired transfer layer 806, and may also provide a heat spreadingcapability so that the temperature of desired transfer layer 806 andbonding material 804 locally near the optical anneal beam 808, and inthe beam's immediate past locations, may not exceed the debondtemperature of the bonding material 804 to desired transfer layer 806bond. The annealed and/or activated desired transfer layer 806 may belayer transferred to an acceptor wafer or substrate, as described, forexample, in the referenced patent document FIG. 186. Substrate 800, heatsink reflector material 802, and bonding material 804 may beremoved/decoupled from desired transfer layer 806 by being etched awayor removed during the layer transfer process.

A planar fully depleted n-channel Recessed Channel Array Transistor(FD-RCAT) suitable for a monolithic 3D IC may be constructed as follows.The FD-RCAT may provide an improved source and drain contact resistance,thereby allowing for lower channel doping (such as undoped), and therecessed channel may provide for more flexibility in the engineering ofchannel lengths and transistor characteristics, and increased immunityfrom process variations. The buried doped layer and channel dopantshaping, even to an un-doped channel, may allow for efficient adaptiveand dynamic body biasing to control the transistor threshold andthreshold variations, as well as provide for a fully depleted or deeplydepleted transistor channel. Furthermore, the recessed gate allows foran FD transistor but with thicker silicon for improved lateral heatconduction. FIG. 9A-F illustrates an exemplary n-channel FD-RCAT whichmay be constructed in a 3D stacked layer using procedures outlined belowand in U.S. Patent Application Publication 2012/0129301 (allowed U.S.patent application Ser. No. 13/273,712, now U.S. Pat. No. 8,273,610) andU.S. patent application Ser. Nos. 13/441,923 and 13/099,010, now U.S.Pat. Nos. 8,557,632 and 8,581,349. The contents of the foregoingapplications are incorporated herein by reference.

As illustrated in FIG. 9A, a P− substrate donor wafer 900 may beprocessed to include wafer sized layers of N+ doping 902, P− doping 906,channel 903 and P+ doping 904 across the wafer. The N+ doped layer 902,P− doped layer 906, channel layer 903 and P+ doped layer 904 may beformed by ion implantation and thermal anneal P− substrate donor wafer900 may include a crystalline material, for example, mono-crystalline(single crystal) silicon. P− doped layer 906 and channel layer 903 mayhave additional ion implantation and anneal processing to provide adifferent dopant level than P− substrate donor wafer 900. P− substratedonor wafer 900 may be very lightly doped (less than 1e15 atoms/cm³) ornominally un-doped (less than 1e14 atoms/cm³). P− doped layer 906,channel layer 903, and P+ doped layer 904 may have graded or variouslayers doping to mitigate transistor performance issues, such as, forexample, short channel effects, after the FD-RCAT is formed, and toprovide effective body biasing, whether adaptive or dynamic. The layerstack may alternatively be formed by successive epitaxially depositeddoped silicon layers of N+ doped layer 902, P− doped layer 906, channellayer 903 and P+ doped layer 904, or by a combination of epitaxy andimplantation. Annealing of implants and doping may include, for example,conductive/inductive thermal, optical annealing techniques or types ofRapid Thermal Anneal (RTA or spike). The N+ doped layer 902 may have adoping concentration that may be more than 10× the doping concentrationof P− doped layer 906 and/or channel layer 903. The P+ doped layer 904may have a doping concentration that may be more than 10× the dopingconcentration of P− doped layer 906 and/or channel layer 903. The P−doped layer 906 may have a doping concentration that may be more than10× the doping concentration of channel layer 903. Channel layer 903 mayhave a thickness that may allow fully-depleted channel operation whenthe FD-RCAT transistor is substantially completely formed, such as, forexample, less than 5 nm, less than 10 nm, or less than 20 nm.

As illustrated in FIG. 9B, the top surface of the P− substrate donorwafer 900 layer stack may be prepared for oxide wafer bonding with adeposition of an oxide or by thermal oxidation of P+ doped layer 904 toform oxide layer 980. A layer transfer demarcation plane (shown asdashed line) 999 may be formed by hydrogen implantation or other methodsas described in the incorporated references. The P− substrate donorwafer 900 and acceptor wafer 910 may be prepared for wafer bonding aspreviously described and low temperature (less than approximately 400°C.) bonded. Acceptor wafer 910, as described in the incorporatedreferences, may include, for example, transistors, circuitry, and metal,such as, for example, aluminum or copper, interconnect wiring, a metalshield/heat sink layer, and thru layer via metal interconnect strips orpads. The portion of the N+ doped layer 902 and the P− substrate donorwafer 900 that may be above (when the layer stack is flipped over andbonded to the acceptor wafer) the layer transfer demarcation plane 999may be removed by cleaving or other low temperature processes asdescribed in the incorporated references, such as, for example, ion-cutor other layer transfer methods.

As illustrated in FIG. 9C, oxide layer 980, P+ doped layer 904, channellayer 903, P− doped layer 906, and remaining N+ layer 922 have beenlayer transferred to acceptor wafer 910. The top surface of N+ layer 922may be chemically or mechanically polished. Now transistors may beformed with low temperature (less than approximately 400° C. exposure tothe acceptor wafer 910) processing and aligned to the acceptor waferalignment marks (not shown) as described in the incorporated references.

As illustrated in FIG. 9D, the transistor isolation regions 905 may beformed by mask defining and plasma/RIE etching remaining N+ layer 922,P− doped layer 906, channel layer 903, and P+ doped layer 904substantially to the top of oxide layer 980 (not shown), substantiallyinto oxide layer 980, or into a portion of the upper oxide layer ofacceptor wafer 910 (not shown). Additionally, a portion of thetransistor isolation regions 905 may be etched (separate step)substantially to P+ doped layer 904, thus allowing multiple transistorregions to be connected by the same P+ doped region 924. Alow-temperature gap fill oxide may be deposited and chemicallymechanically polished, the oxide remaining in isolation regions 905. Therecessed channel 986 may be mask defined and etched thru remaining N+doped layer 922, P− doped layer 906 and partially into channel layer903. The recessed channel surfaces and edges may be smoothed byprocesses, such as, for example, wet chemical, plasma/RIE etching, lowtemperature hydrogen plasma, or low temperature oxidation and striptechniques, to mitigate high field effects. The low temperaturesmoothing process may employ, for example, a plasma produced in a TEL(Tokyo Electron Labs) SPA (Slot Plane Antenna) machine. Thus N+ sourceand drain regions 932, P− regions 926, and channel region 923 may beformed, which may substantially form the transistor body. The dopingconcentration of N+ source and drain regions 932 may be more than 10×the concentration of channel region 923. The doping concentration of theN− channel region 923 may include gradients of concentration or layersof differing doping concentrations. The doping concentration of N+source and drain regions 932 may be more than 10× the concentration ofP− regions 926. The etch formation of recessed channel 986 may definethe transistor channel length. The shape of the recessed etch may berectangular as shown, or may be spherical (generally from wet etching,sometimes called an S-RCAT: spherical RCAT), or a variety of othershapes due to etching methods and shaping from smoothing processes, andmay help control for the channel electric field uniformity. Thethickness of channel region 923 in the region below recessed channel 986may be of a thickness that allows fully-depleted channel operation. Thethickness of channel region 923 in the region below N+ source and drainregions 932 may be of a thickness that allows fully-depleted transistoroperation.

As illustrated in FIG. 9E, a gate dielectric 907 may be formed and agate metal material may be deposited. The gate dielectric 907 may be anatomic layer deposited (ALD) gate dielectric that may be paired with awork function specific gate metal in the industry standard high k metalgate process schemes described in the incorporated references.Alternatively, the gate dielectric 907 may be formed with a lowtemperature processes including, for example, oxide deposition or lowtemperature microwave plasma oxidation of the silicon surfaces and agate material with proper work function and less than approximately 400°C. deposition temperature such as, for example, tungsten or aluminum maybe deposited. The gate material may be chemically mechanically polished,and the gate area defined by masking and etching, thus forming the gateelectrode 908. The shape of gate electrode 908 is illustrative, the gateelectrode may also overlap a portion of N+ source and drain regions 932.

As illustrated in FIG. 9F, a low temperature thick oxide 909 may bedeposited and planarized, and source, gate, and drain contacts, P+ dopedregion contact (not shown) and thru layer via (not shown) openings maybe masked and etched preparing the transistors to be connected viametallization. P+ doped region contact may be constructed thru isolationregions 905, suitably when the isolation regions 905 is formed to ashared P+ doped region 924. Thus gate contact 911 connects to gateelectrode 908, and source & drain contacts 940 connect to N+ source anddrain regions 932. The thru layer via (not shown) provides electricalcoupling among the donor wafer transistors and the acceptor wafer metalconnect pads or strips (not shown) as described in the incorporatedreferences.

Persons of ordinary skill in the art will appreciate that theillustrations in FIGS. 9A through 9F are exemplary only and are notdrawn to scale. Such skilled persons will further appreciate that manyvariations are possible such as, for example, a p-channel FD-RCAT may beformed with changing the types of dopings appropriately. Moreover, theP− substrate donor wafer 900 may be n type or un-doped. Further, P−doped channel layer 903 may include multiple layers of different dopingconcentrations and gradients to fine tune the eventual FD-RCAT channelfor electrical performance and reliability characteristics, such as, forexample, off-state leakage current and on-state current. Furthermore,isolation regions 905 may be formed by a hard mask defined process flow,wherein a hard mask stack, such as, for example, silicon oxide andsilicon nitride layers, or silicon oxide and amorphous carbon layers,may be utilized. Moreover, CMOS FD-RCATs may be constructed withn-JLRCATs in a first mono-crystalline silicon layer and p-JLRCATs in asecond mono-crystalline layer, which may include different crystallineorientations of the mono-crystalline silicon layers, such as forexample, <100>, <111> or <551>, and may include different contactsilicides for optimum contact resistance to p or n type source, drains,and gates. Furthermore, P+ doped regions 924 may be utilized for adouble gate structure for the FD-RCAT and may utilize techniquesdescribed in the incorporated references. Further, efficient heatremoval and transistor body biasing may be accomplished on a FD-RCAT byadding an appropriately doped buried layer (N− in the case of an-FD-RCAT), forming a buried layer region underneath the P+ doped region924 for junction isolation, and connecting that buried region to athermal and electrical contact, similar to what is described for layer1606 and region 1646 in FIGS. 16A-G in the incorporated reference U.S.patent application Ser. No. 13/441,923, now U.S. Pat. No. 8,557,632.Many other modifications within the scope of the invention will suggestthemselves to such skilled persons after reading this specification.Thus the invention is to be limited only by the appended claims.

Defect annealing, such as furnace thermal or optical annealing, of thinlayers of the crystalline materials generally included in 3D-ICs to thetemperatures that may lead to substantial dopant activation or defectanneal, for example above 600° C., may damage or melt the underlyingmetal interconnect layers of the stacked 3D-IC, such as copper oraluminum interconnect layers. An embodiment of the invention is to form3D-IC structures and devices wherein a heat spreading, heat conductingand/or optically reflecting material layer or layers is incorporatedbetween the sensitive metal interconnect layers and the layer or regionsbeing optically irradiated and annealed, or annealed from the top of the3D-IC stack using other methods. An exemplary generalized process flowis shown in FIGS. 10A-F. An exemplary process flow for an FD-RCAT withan integrated heat spreader is shown in FIGS. 34A-G. The 3D-ICs may beconstructed in a 3D stacked layer using procedures outlined in U.S.Patent Application Publication 2012/0129301 (allowed U.S. patentapplication Ser. No. 13/273,712, now U.S. Pat. No. 8,273,610) and U.S.patent application Ser. Nos. 13/441,923 and 13/099,010, now U.S. Pat.Nos. 8,557,632 and 8,581,349. The contents of the foregoing applicationsare incorporated herein by reference. The topside defect anneal mayinclude optical annealing to repair defects in the crystalline 3D-IClayers and regions (which may be caused by the ion-cut implantationprocess), and may be utilized to activate semiconductor dopants in thecrystalline layers or regions of a 3D-IC, such as, for example, LDD,halo, source/drain implants. The 3D-IC may include, for example, stacksformed in a monolithic manner with thin layers or stacks and verticalconnection such as TLVs, and stacks formed in an assembly manner withthick (>2 um) layers or stacks and vertical connections such as TSVs.Optical annealing beams or systems, such as, for example, a laser-spikeanneal beam from a commercial semiconductor material oriented single ordual-beam continuous wave (CW) laser spike anneal DB-LSA system ofUltratech Inc., San Jose, Calif., USA (10.6 um laser wavelength) or ashort pulse laser (such as 160 ns), with 308 nm wavelength, and largearea irradiation such as offered by Excico of Gennevilliers, France, maybe utilized. Additionally, the defect anneal may include, for example,laser anneals, Rapid Thermal Anneal (RTA), flash anneal, UltrasoundTreatments (UST), megasonic treatments, and/or microwave treatments. Thetopside defect anneal ambient may include, for example, vacuum, highpressure (greater than about 760 torr), oxidizing atmospheres (such asoxygen or partial pressure oxygen), and/or reducing atmospheres (such asnitrogen or argon). The topside defect anneal may include temperaturesof the layer being annealed above about 400° C. (a high temperaturethermal anneal), including, for example, 600° C., 800° C., 900° C.,1000° C., 1050° C., 1100° C. and/or 1120° C. The topside defect annealmay include activation of semiconductor dopants, such as, for example,ion implanted dopants or PLAD applied dopants.

As illustrated in FIG. 10A, a generalized process flow may begin with adonor wafer 1000 that may be preprocessed with wafer sized layers 1002of conducting, semi-conducting or insulating materials that may beformed by deposition, ion implantation and anneal, oxidation, epitaxialgrowth, combinations of above, or other semiconductor processing stepsand methods. For example, donor wafer 1000 and wafer sized layers 1002may include semiconductor materials such as, for example,mono-crystalline silicon, germanium, GaAs, InP, and graphene. For thisillustration, mono-crystalline (single crystal) silicon may be used. Thedonor wafer 1000 may be preprocessed with a layer transfer demarcationplane (shown as dashed line) 1099, such as, for example, a hydrogenimplant cleave plane, before or after (typical) wafer sized layers 1002are formed. Layer transfer demarcation plane 1099 may alternatively beformed within wafer sized layers 1002. Other layer transfer processes,some described in the referenced patent documents, may alternatively beutilized. Damage/defects to crystalline structure of donor wafer 1000may be annealed by some of the annealing methods described, for examplethe short wavelength pulsed laser techniques, wherein the donor wafer1000 wafer sized layers 1002 and portions of donor wafer 1000 may beheated to defect annealing temperatures, but the layer transferdemarcation plane 1099 may be kept below the temperate for cleavingand/or significant hydrogen diffusion. Dopants in at least a portion ofwafer sized layers 1002 may also be electrically activated. Thru theprocessing, donor wafer 1000 and/or wafer sized layers 1002 could bethinned from its original thickness, and their/its final thickness couldbe in the range of about 0.01 um to about 50 um, for example, 10 nm, 100nm, 200 nm, 0.4 um, 1 um, 2 um or 5 um. Donor wafer 1000 and wafer sizedlayers 1002 may include preparatory layers for the formation oftransistors such as, for example, MOSFETS, FinFets, FD-RCATs, BJTs,HEMTs, HBTs, or partially processed transistors (for example, thereplacement gate process described in the referenced patent documents).Donor wafer 1000 and wafer sized layers 1002 may include the layertransfer devices and/or layer or layers contained herein this documentor referenced patent documents, for example, DRAM Si/SiO2 layers, RCATdoped layers, or starting material doped or undoped monocrystallinesilicon, or polycrystalline silicon. Donor wafer 1000 and wafer sizedlayers 1002 may have alignment marks (not shown). Acceptor wafer 1010may be a preprocessed wafer that may have fully functional circuitryincluding metal layers (including aluminum or copper metal interconnectlayers that may connect acceptor wafer 1010 transistors) or may be awafer with previously transferred layers, or may be a blank carrier orholder wafer, or other kinds of substrates suitable for layer transferprocessing. Acceptor wafer 1010 may have alignment marks 1090 and metalconnect pads or strips 1080 and ray blocked metal interconnect 1081.Acceptor wafer 1010 may include transistors such as, for example,MOSFETS, FinFets, FD-RCATs, BJTs, HEMTs, and/or HBTs. Acceptor wafer1010 may include shield/heat sink layer 1088, which may includematerials such as, for example, Aluminum, Tungsten, Copper, silicon orcobalt based silicides, or forms of carbon such as carbon nanotubes.Shield/heat sink layer 1088 may have a thickness range of about 50 nm toabout 1 mm, for example, 50 nm, 100 nm, 200 nm, 300 nm, 500 nm, 0.1 um,1 um, 2 um, and 10 um. Shield/heat sink layer 1088 may include isolationopenings 1086, and alignment mark openings 1087, which may be utilizedfor short wavelength alignment of top layer (donor) processing to theacceptor wafer alignment marks 1090. Shield/heat sink layer 1088 mayinclude shield path connect 1085 and shield path via 1083. Shield pathvia 1083 may thermally and/or electrically couple and connect shieldpath connect 1085 to acceptor wafer 1010 interconnect metallizationlayers such as, for example, metal connect pads or strips 1080 (shown).If two shield/heat sink layers 1088 are utilized, one on top of theother and separated by an isolation layer common in semiconductor BEOL,such as carbon doped silicon oxide, shield path connect 1085 may alsothermally and/or electrically couple and connect each shield/heat sinklayer 1088 to the other and to acceptor wafer 1010 interconnectmetallization layers such as, for example, metal connect pads or strips1080, thereby creating a heat conduction path from the shield/heat sinklayer 1088 to the acceptor wafer substrate, and a heat sink (shown inFIG. 10F.).

As illustrated in FIG. 10B, two exemplary top views of shield/heat sinklayer 1088 are shown. In shield/heat sink portion 1020 a shield area1022 of the shield/heat sink layer 1088 materials described above and inthe incorporated references may include TLV/TSV connects 1024 andisolation openings 1086. Isolation openings 1086 may be the absence ofthe material of shield area 1022. TLV/TSV connects 1024 are an exampleof a shield path connect 1085. TLV/TSV connects 1024 and isolationopenings 1086 may be drawn in the database of the 3D-IC stack and mayformed during the acceptor wafer 1010 processing. In shield/heat sinkportion 1030 a shield area 1032 of the shield/heat sink layer 1088materials described above and in the incorporated references may havemetal interconnect strips 1034 and isolation openings 1086. Metalinterconnect strips 1034 may be surrounded by regions, such as isolationopenings 1086, where the material of shield area 1032 may be etchedaway, thereby stopping electrical conduction from metal interconnectstrips 1034 to shield area 1032 and to other metal interconnect strips.Metal interconnect strips 1034 may be utilized to connect/couple thetransistors formed in the donor wafer layers, such as 1002, tothemselves from the ‘backside’ or ‘underside’ and/or to transistors inthe acceptor wafer level/layer. Metal interconnect strips 1034 andshield/heat sink layer 1088 regions such as shield area 1022 and shieldarea 1032 may be utilized as a ground plane for the transistors above itresiding in the donor wafer layers.

Bonding surfaces, donor bonding surface 1001 and acceptor bondingsurface 1011, may be prepared for wafer bonding by depositions (such assilicon oxide), polishes, plasma, or wet chemistry treatments tofacilitate successful wafer to wafer bonding.

As illustrated in FIG. 10C, the donor wafer 1000 with wafer sized layers1002 and layer transfer demarcation plane 1099 may be flipped over,aligned, and bonded to the acceptor wafer 1010. The donor wafer 1000with wafer sized layers 1002 may have alignment marks (not shown).Various topside defect anneals may be utilized. For this illustration,an optical beam such as the laser annealing previously described isused. Optical anneal beams may be optimized to focus light absorptionand heat generation at or near the layer transfer demarcation plane(shown as dashed line) 1099 to provide a hydrogen bubble cleave withexemplary cleave ray 1051. The laser assisted hydrogen bubble cleavewith the absorbed heat generated by exemplary cleave ray 1051 may alsoinclude a pre-heat of the bonded stack to, for example, about 100° C. toabout 400° C., and/or a thermal rapid spike to temperatures above about200° C. to about 600° C. The laser assisted ion-cut cleave may provide asmoother cleave surface upon which better quality transistors may bemanufactured. Reflected ray 1053 may be reflected and/or absorbed byshield/heat sink layer 1088 regions thus blocking the optical absorptionof ray blocked metal interconnect 1081. Additionally, shield/heat sinklayer 1088 may laterally spread and conduct the heat generated by thetopside defect anneal, and in conjunction with the dielectric materials(low heat conductivity) above and below shield/heat sink layer 1088,keep the interconnect metals and low-k dielectrics of the acceptor waferinterconnect layers cooler than a damage temperature, such as, forexample, 400 C. Annealing of dopants or annealing of damage, such asfrom the H cleave implant damage, may be accomplished by a rays such asrepair ray 1055. A small portion of the optical energy, such asunblocked ray 1057, may hit and heat, or be reflected, by (a few rays asthe area of the heat shield openings, such as 1024, is small compared tothe die or device area) such as metal connect pads or strips 1080. Heatgenerated by absorbed photons from, for example, cleave ray 1051,reflected ray 1053, and/or repair ray 1055 may also be absorbed byshield/heat sink layer 1088 regions and dissipated laterally and maykeep the temperature of underlying metal layers, such as ray blockedmetal interconnect 1081, and other metal layers below it, cooler andprevent damage. Shield/heat sink layer 1088 may act as a heat spreader.A second layer of shield/heat sink layer 1088 (not shown) may have beenconstructed (during the acceptor wafer 1010 formation) with a low heatconductive material sandwiched between the two heat sink layers, such assilicon oxide or carbon doped ‘low-k’ silicon oxides, for improvedthermal protection of the acceptor wafer interconnect layers, metal anddielectrics. Electrically conductive materials may be used for the twolayers of shield/heat sink layer 1088 and thus may provide, for example,a Vss and a Vdd plane for power delivery that may be connected to thedonor layer transistors above, as well may be connected to the acceptorwafer transistors below. Shield/heat sink layer 1088 may includematerials with a high thermal conductivity greater than 10 W/m-K, forexample, copper (about 400 W/m-K), aluminum (about 237 W/m-K), Tungsten(about 173 W/m-K), Plasma Enhanced Chemical Vapor Deposited Diamond LikeCarbon-PECVD DLC (about 1000 W/m-K), and Chemical Vapor Deposited (CVD)graphene (about 5000 W/m-K). Shield/heat sink layer 1088 may besandwiched and/or substantially enclosed by materials with a low thermalconductivity less than 10 W/m-K, for example, silicon dioxide (about 1.4W/m-K). The sandwiching of high and low thermal conductivity materialsin layers, such as shield/heat sink layer 1088 and under & overlyingdielectric layers, spreads the localized heat/light energy of thetopside anneal laterally and protect the underlying layers ofinterconnect metallization & dielectrics, such as in the acceptor wafer,from harmful temperatures or damage.

As illustrated in FIG. 10D, the donor wafer 1000 may be cleaved at orthinned to (or past, not shown) the layer transfer demarcation plane1099, leaving donor wafer portion 1003 and the pre-processed layers 1002bonded to the acceptor wafer 1010, by methods such as, for example,ion-cut or other layer transfer methods. The layer transfer demarcationplane 1099 may instead be placed in the pre-processed layers 1002.Optical anneal beams may be optimized to focus light absorption and heatgeneration within or at the surface of donor wafer portion 1003 andprovide surface smoothing and/or defect annealing (defects may be fromthe cleave and/or the ion-cut implantation) with exemplarysmoothing/annealing ray 1066. The laser assisted smoothing/annealingwith the absorbed heat generated by exemplary smoothing/annealing ray1066 may also include a pre-heat of the bonded stack to, for example,about 100° C. to about 400° C., and/or a thermal rapid spike totemperatures above about 200° C. to about 600° C. Reflected ray 1063 maybe reflected and/or absorbed by shield/heat sink layer 1088 regions thusblocking the optical absorption of ray blocked metal interconnect 1081.Annealing of dopants or annealing of damage, such as from the H cleaveimplant damage, may be also accomplished by a set of rays such as repairray 1065. A small portion of the optical energy, such as unblocked ray1067, may hit and heat, or be reflected, by a few rays (as the area ofthe heat shield openings, such as 1024, is small) such as metal connectpads or strips 1080. Heat generated by absorbed photons from, forexample, smoothing/annealing ray 1066, reflected ray 1063, and/or repairray 1065 may also be absorbed by shield/heat sink layer 1088 regions anddissipated laterally and may keep the temperature of underlying metallayers, such as ray blocked metal interconnect 1081, and other metallayers below it, cooler and prevent damage. A second layer ofshield/heat sink layer 1088 may be constructed with a low heatconductive material sandwiched between the two heat sink layers, such assilicon oxide or carbon doped ‘low-k’ silicon oxides, for improvedthermal protection of the acceptor wafer interconnect layers, metal anddielectrics. Shield/heat sink layer 1088 may act as a heat spreader.Electrically conductive materials may be used for the two layers ofshield/heat sink layer 1088 and thus may provide, for example, a Vss anda Vdd plane that may be connected to the donor layer transistors above,as well may be connected to the acceptor wafer transistors below.

As illustrated in FIG. 10E, the remaining donor wafer portion 1003 maybe removed by polishing or etching and the transferred layers 1002 maybe further processed to create second device layer 1005 which mayinclude donor wafer device structures 1050 and metal interconnect layers(such as second device layer metal interconnect 1061) that may beprecisely aligned to the acceptor wafer alignment marks 1090. Donorwafer device structures 1050 may include, for example, CMOS transistorssuch as N type and P type transistors, or any of the other transistor ordevice types discussed herein this document or referenced patentdocuments. Second device layer metal interconnect 1061 may includeelectrically conductive materials such as copper, aluminum, conductiveforms of carbon, and tungsten. Donor wafer device structures 1050 mayutilize second device layer metal interconnect 1061 and thru layer vias(TLVs) 1060 to electrically couple (connection paths) the donor waferdevice structures 1050 to the acceptor wafer metal connect pads orstrips 1080, and thus couple donor wafer device structures (the secondlayer transistors) with acceptor wafer device structures (first layertransistors). Thermal TLVs 1062 may be constructed of thermallyconductive but not electrically conductive materials, for example, DLC(Diamond Like Carbon), and may connect donor wafer device structures1050 thermally to shield/heat sink layer 1088. TLVs 1060 may beconstructed out of electrically and thermally conductive materials, suchas Tungsten, Copper, or aluminum, and may provide a thermal andelectrical connection path from donor wafer device structures 1050 toshield/heat sink layer 1088, which may be a ground or Vdd plane in thedesign/layout. TLVs 1060 and thermal TLVs 1062 may be also constructedin the device scribelanes (pre-designed in base layers or potentialdicelines) to provide thermal conduction to the heat sink, and may besawed/diced off when the wafer is diced for packaging. Shield/heat sinklayer 1088 may be configured to act as an emf (electro-motive force)shield to prevent direct layer to layer cross-talk between transistorsin the donor wafer layer and transistors in the acceptor wafer. Inaddition to static ground or Vdd biasing, shield/heat sink layer 1088may be actively biased with an anti-interference signal from circuitryresiding on, for example, a layer of the 3D-IC or off chip. TLVs 1060may be formed through the transferred layers 1002. As the transferredlayers 1002 may be thin, on the order of about 200 nm or less inthickness, the TLVs may be easily manufactured as a typical metal tometal via may be, and said TLV may have state of the art diameters suchas nanometers or tens to a few hundreds of nanometers, such as, forexample about 150 nm or about 100 nm or about 50 nm. The thinner thetransferred layers 1002, the smaller the thru layer via diameterobtainable, which may result from maintaining manufacturable via aspectratios. Thus, the transferred layers 1002 (and hence, TLVs 1060) may be,for example, less than about 2 microns thick, less than about 1 micronthick, less than about 0.4 microns thick, less than about 200 nm thick,less than about 150 nm thick, or less than about 100 nm thick. Thethickness of the layer or layers transferred according to someembodiments of the invention may be designed as such to match and enablethe most suitable obtainable lithographic resolution, such as, forexample, less than about 10 nm, 14 nm, 22 nm or 28 nm linewidthresolution and alignment capability, such as, for example, less thanabout 5 nm, 10 nm, 20 nm, or 40 nm alignment accuracy/precision/error,of the manufacturing process employed to create the thru layer vias orany other structures on the transferred layer or layers. Transferredlayers 1002 may be considered to be overlying the metal layer or layersof acceptor wafer 1010. Alignment marks in acceptor wafer 1010 and/or intransferred layers 1002 may be utilized to enable reliable contact totransistors and circuitry in transferred layers 1002 and donor waferdevice structures 1050 and electrically couple them to the transistorsand circuitry in the acceptor wafer 1010. The donor wafer 1000 may nowalso be processed, such as smoothing and annealing, and reused foradditional layer transfers.

As illustrated in FIG. 10F, a thermal conduction path may be constructedfrom the devices in the upper layer, the transferred donor layer andformed transistors, to the acceptor wafer substrate and associated heatsink. The thermal conduction path from the donor wafer device structures1050 to the acceptor wafer heat sink 1097 may include second devicelayer metal interconnect 1061, TLVs 1060, shield path connect 1085,shield path via 1083, metal connect pads or strips 1080, first(acceptor) layer metal interconnect 1091, acceptor wafer transistors anddevices 1093, and acceptor substrate 1095. The elements of the thermalconduction path may include materials that have a thermal conductivitygreater than 10 W/m-K, for example, copper (about 400 W/m-K), aluminum(about 237 W/m-K), and Tungsten (about 173 W/m-K). The acceptor waferinterconnects may be substantially surrounded by BEOL dielectric 1096.

A planar fully depleted n-channel Recessed Channel Array Transistor(FD-RCAT) with an integrated shield/heat sink layer suitable for amonolithic 3D IC may be constructed as follows. The FD-RCAT may providean improved source and drain contact resistance, thereby allowing forlower channel doping (such as undoped), and the recessed channel mayprovide for more flexibility in the engineering of channel lengths andtransistor characteristics, and increased immunity from processvariations. The buried doped layer and channel dopant shaping, even toan un-doped channel, may allow for efficient adaptive and dynamic bodybiasing to control the transistor threshold and threshold variations, aswell as provide for a fully depleted or deeply depleted transistorchannel. Furthermore, the recessed gate allows for an FD transistor butwith thicker silicon for improved lateral heat conduction. Moreover, aheat spreading, heat conducting and/or optically reflecting materiallayer or layers may be incorporated between the sensitive metalinterconnect layers and the layer or regions being optically irradiatedand annealed to repair defects in the crystalline 3D-IC layers andregions and to activate semiconductor dopants in the crystalline layersor regions of a 3D-IC without harm to the sensitive metal interconnectand associated dielectrics. FIG. 11A-G illustrates an exemplaryn-channel FD-RCAT which may be constructed in a 3D stacked layer usingprocedures outlined below and in U.S. Patent Application Publication2012/0129301 (allowed U.S. patent application Ser. No. 13/273,712, nowU.S. Pat. No. 8,273,610) and U.S. patent application Ser. Nos.13/441,923 and 13/099,010, now U.S. Pat. Nos. 8,557,632 and 8,581,349.The contents of the foregoing applications are incorporated herein byreference.

As illustrated in FIG. 11A, a P− substrate donor wafer 1100 may beprocessed to include wafer sized layers of N+ doping 1102, P− doping1106, channel 1103 and P+ doping 1104 across the wafer. The N+ dopedlayer 1102, P− doped layer 1106, channel layer 1103 and P+ doped layer1104 may be formed by ion implantation and thermal anneal P− substratedonor wafer 1100 may include a crystalline material, for example,mono-crystalline (single crystal) silicon. P− doped layer 1106 andchannel layer 1103 may have additional ion implantation and annealprocessing to provide a different dopant level than P− substrate donorwafer 1100. P− substrate donor wafer 1100 may be very lightly doped(less than 1e15 atoms/cm³) or nominally un-doped (less than 1e14atoms/cm³). P− doped layer 1106, channel layer 1103, and P+ doped layer1104 may have graded or various layers doping to mitigate transistorperformance issues, such as, for example, short channel effects, afterthe FD-RCAT is formed, and to provide effective body biasing, whetheradaptive or dynamic. The layer stack may alternatively be formed bysuccessive epitaxially deposited doped silicon layers of N+ doped layer1102, P− doped layer 1106, channel layer 1103 and P+ doped layer 1104,or by a combination of epitaxy and implantation, or by layer transfer.Annealing of implants and doping may include, for example,conductive/inductive thermal, optical annealing techniques or types ofRapid Thermal Anneal (RTA or spike). The N+ doped layer 1102 may have adoping concentration that may be more than 10× the doping concentrationof P− doped layer 1106 and/or channel layer 1103. The P+ doped layer1104 may have a doping concentration that may be more than 10× thedoping concentration of P− doped layer 1106 and/or channel layer 1103.The P− doped layer 1106 may have a doping concentration that may be morethan 10× the doping concentration of channel layer 1103. Channel layer1103 may have a thickness that may allow fully-depleted channeloperation when the FD-RCAT transistor is substantially completelyformed, such as, for example, less than 5 nm, less than 10 nm, or lessthan 20 nm.

As illustrated in FIG. 11B, the top surface of the P− substrate donorwafer 1100 layer stack may be prepared for oxide wafer bonding with adeposition of an oxide or by thermal oxidation of P+ doped layer 1104 toform oxide layer 1180. A layer transfer demarcation plane (shown asdashed line) 1199 may be formed by hydrogen implantation or othermethods as described in the incorporated references. The P− substratedonor wafer 1100 and acceptor wafer 1110 may be prepared for waferbonding as previously described and low temperature (less thanapproximately 400° C.) bonded. Acceptor wafer 1110, as described in theincorporated references, may include, for example, transistors,circuitry, and metal, such as, for example, aluminum or copper,interconnect wiring, a metal shield/heat sink layer, and thru layer viametal interconnect strips or pads. Acceptor wafer 1110 may includetransistors such as, for example, MOSFETS, FinFets, FD-RCATs, BJTs,HEMTs, and/or HBTs. The portion of the N+ doped layer 1102 and the P−substrate donor wafer 1100 that may be above (when the layer stack isflipped over and bonded to the acceptor wafer) the layer transferdemarcation plane 1199 may be removed by cleaving or other lowtemperature processes as described in the incorporated references, suchas, for example, ion-cut or other layer transfer methods. Damage/defectsto crystalline structure of N+ doped layer 1102, P− doped layer 1106,channel layer 1103 and P+ doped layer 1104 may be annealed by some ofthe annealing methods described, for example the short wavelength pulsedlaser techniques, wherein the N+ doped layer 1102, P− doped layer 1106,channel layer 1103 and P+ doped layer 1104 or portions of them may beheated to defect annealing temperatures, but the layer transferdemarcation plane 1199 may be kept below the temperate for cleavingand/or significant hydrogen diffusion. The optical energy may bedeposited in the upper layer of the stack, for example in P+ doped layer1104, and annealing of the other layer may take place via heatdiffusion. Dopants in at least a portion of N+ doped layer 1102, P−doped layer 1106, channel layer 1103 and P+ doped layer 1104 may also beelectrically activated by the anneal.

As illustrated in FIG. 11C, oxide layer 1180, P+ doped layer 1104,channel layer 1103, P− doped layer 1106, and remaining N+ layer 1122have been layer transferred to acceptor wafer 1110. The top surface ofN+ layer 1122 may be chemically or mechanically polished. Thru theprocessing, the wafer sized layers such as N+ layer 1122 P+ doped layer1104, channel layer 1103, and P− doped layer 1106, could be thinned fromits original total thickness, and their/its final total thickness couldbe in the range of about 0.01 um to about 50 um, for example, 10 nm, 100nm, 200 nm, 0.4 um, 1 um, 2 um or 5 um. Acceptor wafer 1110 may includeone or more (two are shown in this example) shield/heat sink layers1188, which may include materials such as, for example, Aluminum,Tungsten, Copper, silicon or cobalt based silicides, or forms of carbonsuch as carbon nanotubes. Each shield/heat sink layer 1188 may have athickness range of about 50 nm to about 1 mm, for example, 50 nm, 100nm, 200 nm, 300 nm, 500 nm, 0.1 um, 1 um, 2 um, and 10 um. Shield/heatsink layer 1188 may include isolation openings 1187, and alignment markopenings (not shown), which may be utilized for short wavelengthalignment of top layer (donor) processing to the acceptor waferalignment marks (not shown). Shield/heat sink layer 1188 may include oneor more shield path connect 1185 and shield path via 1183. Shield pathvia 1183 may thermally and/or electrically couple and connect shieldpath connect 1185 to acceptor wafer 1110 interconnect metallizationlayers such as, for example, acceptor metal interconnect 1181 (shown).Shield path connect 1185 may also thermally and/or electrically coupleand connect each shield/heat sink layer 1188 to the other and toacceptor wafer 1110 interconnect metallization layers such as, forexample, acceptor metal interconnect 1181, thereby creating a heatconduction path from the shield/heat sink layer 1188 to the acceptorsubstrate 1195, and a heat sink (shown in FIG. 11G.). Isolation openings1186 may include dielectric materials, similar to those of BEOLisolation 1196. Acceptor wafer 1110 may include first (acceptor) layermetal interconnect 1191, acceptor wafer transistors and devices 1193,and acceptor substrate 1195. Various topside defect anneals may beutilized. For this illustration, an optical beam such as the laserannealing previously described is used. Optical anneal beams may beoptimized to focus light absorption and heat generation within or at thesurface of N+ layer 1122 and provide surface smoothing and/or defectannealing (defects may be from the cleave and/or the ion-cutimplantation) with exemplary smoothing/annealing ray 1166. The laserassisted smoothing/annealing with the absorbed heat generated byexemplary smoothing/annealing ray 1166 may also include a pre-heat ofthe bonded stack to, for example, about 100° C. to about 400° C., and/ora rapid thermal spike to temperatures above about 200° C. to about 600°C. Reflected ray 1163 may be reflected and/or absorbed by shield/heatsink layer 1188 regions thus blocking the optical absorption of rayblocked metal interconnect 1181. Annealing of dopants or annealing ofdamage, such as from the H cleave implant damage, may be alsoaccomplished by a set of rays such as repair ray 1165. Heat generated byabsorbed photons from, for example, smoothing/annealing ray 1166,reflected ray 1163, and/or repair ray 1165 may also be absorbed byshield/heat sink layer 1188 regions and dissipated laterally and maykeep the temperature of underlying metal layers, such as metalinterconnect 1181, and other metal layers below it, cooler and preventdamage. Shield/heat sink layer 1188 and associated dielectrics maylaterally spread and conduct the heat generated by the topside defectanneal, and in conjunction with the dielectric materials (low heatconductivity) above and below shield/heat sink layer 1188, keep theinterconnect metals and low-k dielectrics of the acceptor waferinterconnect layers cooler than a damage temperature, such as, forexample, 400° C. A second layer of shield/heat sink layer 1188 may beconstructed (shown) with a low heat conductive material sandwichedbetween the two heat sink layers, such as silicon oxide or carbon doped‘low-k’ silicon oxides, for improved thermal protection of the acceptorwafer interconnect layers, metal and dielectrics. Shield/heat sink layer1188 may act as a heat spreader. Electrically conductive materials maybe used for the two layers of shield/heat sink layer 1188 and thus mayprovide, for example, a Vss and a Vdd plane that may be connected to thedonor layer transistors above, as well may be connected to the acceptorwafer transistors below. Shield/heat sink layer 1188 may includematerials with a high thermal conductivity greater than 10 W/m-K, forexample, copper (about 400 W/m-K), aluminum (about 237 W/m-K), Tungsten(about 173 W/m-K), Plasma. Enhanced Chemical Vapor Deposited DiamondLike Carbon-PECVD DLC (about 1000 W/m-K), and Chemical Vapor Deposited(CVD) graphene (about 5000 W/m-K). Shield/heat sink layer 1188 may besandwiched and/or substantially enclosed by materials with a low thermalconductivity (less than 10 W/m-K), for example, silicon dioxide (about1.4 W/m-K). The sandwiching of high and low thermal conductivitymaterials in layers, such as shield/heat sink layer 1188 and under &overlying dielectric layers, spreads the localized heat/light energy ofthe topside anneal laterally and protect the underlying layers ofinterconnect metallization & dielectrics, such as in the acceptor wafer,from harmful temperatures or damage. Now transistors may be formed withlow temperature (less than approximately 400° C. exposure to theacceptor wafer 1110) processing, and may be aligned to the acceptorwafer alignment marks (not shown) as described in the incorporatedreferences. The donor wafer 1100 may now also be processed, such assmoothing and annealing, and reused for additional layer transfers.

As illustrated in FIG. 11D, transistor isolation regions 1105 may beformed by mask defining and plasma/RIE etching remaining N+ layer 1122,P− doped layer 1106, channel layer 1103, and P+ doped layer 1104substantially to the top of oxide layer 1180 (not shown), substantiallyinto oxide layer 1180, or into a portion of the upper oxide layer ofacceptor wafer 1110 (not shown). Additionally, a portion of thetransistor isolation regions 1105 may be etched (separate step)substantially to P+ doped layer 1104, thus allowing multiple transistorregions to be connected by the same P+ doped region 1124. Alow-temperature gap fill oxide may be deposited and chemicallymechanically polished, the oxide remaining in isolation regions 1105.The recessed channel 1186 may be mask defined and etched thru remainingN+ doped layer 1122, P− doped layer 1106 and partially into channellayer 1103. The recessed channel surfaces and edges may be smoothed byprocesses, such as, for example, wet chemical, plasma/RIE etching, lowtemperature hydrogen plasma, or low temperature oxidation and striptechniques, to mitigate high field effects. The low temperaturesmoothing process may employ, for example, a plasma produced in a TEL(Tokyo Electron Labs) SPA (Slot Plane Antenna) machine. Thus N+ sourceand drain regions 1132, P− regions 1126, and channel region 1123 may beformed, which may substantially form the transistor body. The dopingconcentration of N+ source and drain regions 1132 may be more than 10×the concentration of channel region 1123. The doping concentration ofthe N− channel region 1123 may include gradients of concentration orlayers of differing doping concentrations. The doping concentration ofN+ source and drain regions 1132 may be more than 10× the concentrationof P− regions 1126. The etch formation of recessed channel 1186 maydefine the transistor channel length. The shape of the recessed etch maybe rectangular as shown, or may be spherical (generally from wetetching, sometimes called an S-RCAT: spherical RCAT), or a variety ofother shapes due to etching methods and shaping from smoothingprocesses, and may help control for the channel electric fielduniformity. The thickness of channel region 1123 in the region belowrecessed channel 1186 may be of a thickness that allows fully-depletedchannel operation. The thickness of channel region 1123 in the regionbelow N+ source and drain regions 1132 may be of a thickness that allowsfully-depleted transistor operation.

As illustrated in FIG. 11E, a gate dielectric 1107 may be formed and agate metal material may be deposited. The gate dielectric 1107 may be anatomic layer deposited (ALD) gate dielectric that may be paired with awork function specific gate metal in the industry standard high k metalgate process schemes described in the incorporated references.Alternatively, the gate dielectric 1107 may be formed with a lowtemperature processes including, for example, oxide deposition or lowtemperature microwave plasma oxidation of the silicon surfaces and agate material with proper work function and less than approximately 400°C. deposition temperature such as, for example, tungsten or aluminum maybe deposited. The gate material may be chemically mechanically polished,and the gate area defined by masking and etching, thus forming the gateelectrode 1108. The shape of gate electrode 1108 is illustrative, thegate electrode may also overlap a portion of N+ source and drain regions1132.

As illustrated in FIG. 11F, a low temperature thick oxide 1109 may bedeposited and planarized, and source, gate, and drain contacts, P+ dopedregion contact (not shown) and thru layer via (not shown) openings maybe masked and etched preparing the transistors to be connected viametallization P+ doped region contact may be constructed thru isolationregions 1105, suitably when the isolation regions 1105 is formed to ashared P+ doped region 1124. Thus gate contact 1111 connects to gateelectrode 1108, and source & drain contacts 1140 connect to N+ sourceand drain regions 1132.

As illustrated in FIG. 11G, thru layer vias (TLVs) 1160 may be formed byetching thick oxide 1109, gate dielectric 1107, isolation regions 1105,oxide layer 1180, into a portion of the upper oxide layer BEOL isolation1196 of acceptor wafer 1110 BEOL, and filling with an electrically andthermally conducting material or an electrically non-conducting butthermally conducting material. Second device layer metal interconnect1161 may be formed by conventional processing. TLVs 1160 may beconstructed of thermally conductive but not electrically conductivematerials, for example, DLC (Diamond Like Carbon), and may connect theFD-RCAT transistor device and other devices on the top (second)crystalline layer thermally to shield/heat sink layer 1188. TLVs 1160may be constructed out of electrically and thermally conductivematerials, such as Tungsten, Copper, or aluminum, and may provide athermal and electrical connection path from the FD-RCAT transistordevice and other devices on the top (second) crystalline layer toshield/heat sink layer 1188, which may be a ground or Vdd plane in thedesign/layout. TLVs 1160 may be also constructed in the devicescribelanes (pre-designed in base layers or potential dicelines) toprovide thermal conduction to the heat sink, and may be sawed/diced offwhen the wafer is diced for packaging not shown). Shield/heat sink layer1188 may be configured to act (or adapted to act) as an emf(electro-motive force) shield to prevent direct layer to layercross-talk between transistors in the donor wafer layer and transistorsin the acceptor wafer. In addition to static ground or Vdd biasing,shield/heat sink layer 1188 may be actively biased with ananti-interference signal from circuitry residing on, for example, alayer of the 3D-IC or off chip. A thermal conduction path may beconstructed from the devices in the upper layer, the transferred donorlayer and formed transistors, to the acceptor wafer substrate andassociated heat sink. The thermal conduction path from the FD-RCATtransistor device and other devices on the top (second) crystallinelayer, for example, N+ source and drain regions 1132, to the acceptorwafer heat sink 1197 may include source & drain contacts 1140, seconddevice layer metal interconnect 1161, TLV 1160, shield path connect 1185(shown as twice), shield path via 1183 (shown as twice), metalinterconnect 1181, first (acceptor) layer metal interconnect 1191,acceptor wafer transistors and devices 1193, and acceptor substrate1195. The elements of the thermal conduction path may include materialsthat have a thermal conductivity greater than 10 W/m-K, for example,copper (about 400 W/m-K), aluminum (about 237 W/m-K), and Tungsten(about 173 W/m-K).

Persons of ordinary skill in the art will appreciate that theillustrations in FIGS. 11A through 11G are exemplary only and are notdrawn to scale. Such skilled persons will further appreciate that manyvariations are possible such as, for example, a p-channel FD-RCAT may beformed with changing the types of dopings appropriately. Moreover, theP− substrate donor wafer 1100 may be n type or un-doped. Further, P−doped channel layer 1103 may include multiple layers of different dopingconcentrations and gradients to fine tune the eventual FD-RCAT channelfor electrical performance and reliability characteristics, such as, forexample, off-state leakage current and on-state current. Furthermore,isolation regions 1105 may be formed by a hard mask defined processflow, wherein a hard mask stack, such as, for example, silicon oxide andsilicon nitride layers, or silicon oxide and amorphous carbon layers,may be utilized. Moreover, CMOS FD-RCATs may be constructed withn-JLRCATs in a first mono-crystalline silicon layer and p-JLRCATs in asecond mono-crystalline layer, which may include different crystallineorientations of the mono-crystalline silicon layers, such as forexample, <100>, <111> or <551>, and may include different contactsilicides for optimum contact resistance to p or n type source, drains,and gates. Furthermore, P+ doped regions 1124 may be utilized for adouble gate structure for the FD-RCAT and may utilize techniquesdescribed in the incorporated references. Further, efficient heatremoval and transistor body biasing may be accomplished on a FD-RCAT byadding an appropriately doped buried layer (N− in the case of an-FD-RCAT), forming a buried layer region underneath the P+ dopedregions 1124 for junction isolation, and connecting that buried regionto a thermal and electrical contact, similar to what is described forlayer 1606 and region 1646 in FIGS. 16A-G in the incorporated referencepending U.S. patent application Ser. No. 13/441,923, now U.S. Pat. No.8,273,610. Implants after the formation of the isolation regions 1105may be annealed by optical (such as pulsed laser) means as previouslydescribed and the acceptor wafer metallization may be protected by theshield/heat sink layer 1188. Many other modifications within the scopeof the invention will suggest themselves to such skilled persons afterreading this specification. Thus the invention is to be limited only bythe appended claims.

While concepts in this patent application have been described withrespect to 3D-ICs with two stacked device layers, those of ordinaryskill in the art will appreciate that it can be valid for 3D-ICs withmore than two stacked device layers. Additionally, some of the conceptsmay be applied to 2D ICs.

While ion-cut has been described in previous sections as the method forlayer transfer, several other procedures exist that fulfill the sameobjective. These include:

Lift-off or laser lift-off: Background information for this technologyis given in “Epitaxial lift-off and its applications”, 1993 Semicond.Sci. Technol. 8 1124 by P Demeester et al. (“Demeester”).

Porous-Si approaches such as ELTRAN: Background information for thistechnology is given in “Eltran, Novel SOI Wafer Technology”, JSAPInternational, Number 4, July 2001 by T. Yonehara and K. Sakaguchi(“Yonehara”) and also in “Frontiers of silicon-on-insulator,” J. Appl.Phys. 93, 4955-4978, 2003 by G. K. Celler and S. Cristoloveanu(“Celler”).

Time-controlled etch-back to thin an initial substrate, Polishing,Etch-stop layer controlled etch-back to thin an initial substrate:Background information on these technologies is given in Celler and inU.S. Pat. No. 6,806,171.

Rubber-stamp based layer transfer: Background information on thistechnology is given in “Solar cells sliced and diced”, 19 May 2010,Nature News.

The above publications giving background information on various layertransfer procedures are incorporated herein by reference. It is obviousto one skilled in the art that one can form 3D integrated circuits andchips as described in this document with layer transfer schemesdescribed in these publications.

Some embodiments of the invention may include alternative techniques tobuild IC (Integrated Circuit) devices including techniques and methodsto construct 3D IC systems. Some embodiments of the invention may enabledevice solutions with far less power consumption than prior art. Thedevice solutions could be very useful for the growing application ofmobile electronic devices and mobile systems such as, for example,mobile phones, smart phone, and cameras, those mobile systems may alsoconnect to the internet. For example, incorporating the 3D ICsemiconductor devices according to some embodiments of the inventionwithin the mobile electronic devices and mobile systems could providesuperior mobile units that could operate much more efficiently and for amuch longer time than with prior art technology.

Smart mobile systems may be greatly enhanced by complex electronics at alimited power budget. The 3D technology described in the multipleembodiments of the invention would allow the construction of low powerhigh complexity mobile electronic systems. For example, it would bepossible to integrate into a small form function a complex logic circuitwith high density high speed memory utilizing some of the 3D DRAMembodiments of the invention and add some non-volatile 3D NAND chargetrap or RRAM described in some embodiments of the invention. Mobilesystem applications of the 3D IC technology described herein may befound at least in FIG. 156 of U.S. Pat. No. 8,273,610, the contents ofwhich are incorporated by reference.

Furthermore, some embodiments of the invention may include alternativetechniques to build systems based on integrated 3D devices includingtechniques and methods to construct 3D IC based systems that communicatewith other 3DIC based systems. Some embodiments of the invention mayenable system solutions with far less power consumption andintercommunication abilities at lower power than prior art. Thesesystems may be called ‘Internet of Things”, or IoT, systems, wherein thesystem enabler is a 3DIC device which may provide at least threefunctions: a sensing capability, a digital and signal processingcapability, and communication capability. For example, the sensingcapability may include a region or regions, layer or layers within the3DIC device which may include, for example, a MEMS accelerometer (singleor multi-axis), gas sensor, electric or magnetic field sensor,microphone or sound sensing (air pressure changes), image sensor of oneor many wavelengths (for example, as disclosed in at least U.S. Pat.Nos. 8,283,215 and 8,163,581, incorporated herein by reference),chemical sensing, gyroscopes, resonant structures, cantileverstructures, ultrasonic transducers (capacitive & piezoelectric). Digitaland signal processing capability may include a region or regions, layeror layers within the 3D IC device which may include, for example, amicroprocessor, digital signal processor, micro-controller, FPGA, andother digital land/or analog logic circuits, devices, and subsystems.Communication capability, such as communication from at least one 3D ICof IoT system to another, or to a host controller/nexus node, mayinclude a region or regions, layer or layers within the 3D IC devicewhich may include, for example, an RF circuit and antenna or antennasfor wireless communication which might utilize standard wirelesscommunication protocols such as G4, WiFi or Bluetooth, I/O buffers andeither mechanical bond pads/wires and/or optical devices/transistors foroptical communication, transmitters, receivers, codecs, DACs, digital oranalog filters, modulators.

Energy harvesting, device cooling and other capabilities may also beincluded in the system. The 3DIC inventions disclosed herein and in theincorporated referenced documents enable the IoT system to closelyintegrate different crystal devices, for example a layer or layers ofdevices/transistors formed on and/or within mono or poly crystallinesilicon combined with a layer or layers of devices/transistors formed onand/or within Ge, or a layer of layers of GaAs, InP, differing siliconcrystal orientations, and so on. For example, incorporating the 3D ICsemiconductor devices according to some embodiments of the invention asor within the IoT systems and mobile systems could provide superior IoTor mobile systems that could operate much more efficiently and for amuch longer time than with prior art technology. The 3D IC technologyherein disclosed provides a most efficient path for heterogeneousintegration with very effective integration reducing cost and operatingpower with the ability to support redundancy for long field life andother advantages which could make such an IoT System commerciallysuccessful.

Alignment is a basic step in semiconductor processing. For most cases itis part of the overall process flow that every successive layer ispatterned when it is aligned to the layer below it. These alignmentscould all be done to one common alignment mark, or to some otheralignment mark or marks that are embedded in a layer underneath. Intoday's equipment such alignment would be precise to below a fewnanometers and better than 40 nm or better than 20 nm and even betterthan 10 nm. In general such alignment could be observed by comparing twodevices processed using the same mask set. If two layers in one devicemaintain their relative relationship in both devices—to fewnanometers—it is clear indication that these layers are aligned each tothe other. This could be achieved by either aligning to the samealignment mark (sometimes called a zero mark alignment scheme), or onelayer is using an alignment mark embedded in the other layer (sometimescalled a direct alignment), or using different alignment marks of layersthat are aligned to each other (sometimes called an indirect alignment).

In this document, the connection made between layers of, generally,single crystal, transistors, which may be variously named for example asthermal contacts and vias, Thru Layer Via (TLV), TSV (Thru Silicon Via),may be made and include electrically and thermally conducting materialor may be made and include an electrically non-conducting but thermallyconducting material or materials. A device or method may includeformation of both of these types of connections, or just one type. Byvarying the size, number, composition, placement, shape, or depth ofthese connection structures, the coefficient of thermal expansionexhibited by a layer or layers may be tailored to a desired value. Forexample, the coefficient of thermal expansion of the second layer oftransistors may be tailored to substantially match the coefficient ofthermal expansion of the first layer, or base layer of transistors,which may include its (first layer) interconnect layers.

Base wafers or substrates, or acceptor wafers or substrates, or targetwafers substrates herein may be substantially comprised of a crystallinematerial, for example, mono-crystalline silicon or germanium, or may bean engineered substrate/wafer such as, for example, an SOI (Silicon onInsulator) wafer or GeOI (Germanium on Insulator) substrate. Similarly,donor wafers herein may be substantially comprised of a crystallinematerial and may include, for example, mono-crystalline silicon orgermanium, or may be an engineered substrate/wafer such as, for example,an SOI (Silicon on Insulator) wafer or GeOI (Germanium on Insulator)substrate, depending on design and process flow choices.

While mono-crystalline silicon has been mentioned as a transistormaterial in this document, other options are possible including, forexample, poly-crystalline silicon, mono-crystalline germanium,mono-crystalline III-V semiconductors, graphene, and various othersemiconductor materials with which devices, such as transistors, may beconstructed within. Moreover, thermal contacts and vias may or may notbe stacked in a substantially vertical line through multiple stacks,layers, strata of circuits. Thermal contacts and vias may includematerials such as sp2 carbon as conducting and sp3 carbon asnon-conducting of electrical current. Thermal contacts and vias mayinclude materials such as carbon nano-tubes. Thermal contacts and viasmay include materials such as, for example, copper, aluminum, tungsten,titanium, tantalum, cobalt metals and/or silicides of the metals. Firstsilicon layers or transistor channels and second silicon layers ortransistor channels may be may be substantially absent of semiconductordopants to form an undoped silicon region or layer, or doped, such as,for example, with elemental or compound species that form a p+, or p, orp−, or n+, or n, or n− silicon layer or region. A heat removal apparatusmay include an external surface from which heat transfer may take placeby methods such as air cooling, liquid cooling, or attachment to anotherheat sink or heat spreader structure. Furthermore, raised source anddrain contact structures, such as etch and epi SiGe and SiC, andimplanted S/Ds (such as C) may be utilized for strain control oftransistor channel to enhance carrier mobility and may provide contactresistance improvements. Damage from the processes may be opticallyannealed. Strain on a transistor channel to enhance carrier mobility maybe accomplished by a stressor layer or layers as well.

In this specification the terms stratum, tier or layer might be used forthe same structure and they may refer to transistors or other devicestructures (such as capacitors, resistors, inductors) that may liesubstantially in a plane format and in most cases such stratum, tier orlayer may include the interconnection layers used to interconnect thetransistors on each. In a 3D device as herein described there may atleast two such planes called tier, or stratum or layer.

In a 3D IC system stack, each layer/stratum may include a differentoperating voltage than other layers/stratum, for example, one stratummay have Vcc of 1.0 v and another may have a Vcc of 0.7 v. For example,one stratum may be designed for logic and have the appropriate Vcc forthat process/device node, and another stratum in the stack may bedesigned for analog devices, and have a different Vcc, likelysubstantially higher in value—for example, greater than 3 volts, greaterthan 5 volts, greater than 8 volts, greater than 10 volts. In a 3D ICsystem stack, each layer/stratum may include a different gate dielectricthickness than other layers/stratum. For example, one stratum mayinclude a gate dielectric thickness of 2 nm and another 10 nm. Thedefinition of dielectric thickness may include both a physicaldefinition of material thickness and an electrically ‘effective’thickness of the material, given differing permittivity of thematerials. In a 3D IC system stack, each layer/stratum may includedifferent gate stack materials than other layers/stratum. For example,one stratum may include a HKMG (High k metal gate) stack and anotherstratum may include a polycide/silicon oxide gate stack. In a 3D ICsystem stack, each layer/stratum may include a different junction depththan other layers/stratum. For example, the depth of the junctions mayinclude a FET transistor source or drain, bipolar emitter and contactjunctions, vertical device junctions, resistor or capacitor junctions,and so on. For example, one stratum may include junctions of a fullydepleted MOSFET, thus its junction depth may be defined by the thicknessof the stratum device silicon to the vertical isolation, and the otherstratum may also be fully depleted devices with a junction depth definedsimilarly, but one stratum has a thicker silicon layer than the otherwith respect to the respective edges of the vertical isolation. In a 3DIC system stack, each layer/stratum may include a different junctioncomposition and/or structure than other layers/stratum. For example, onestratum may include raised source drains that may be constructed from anetch and epitaxial deposition processing, another stratum in the stackmay have implanted and annealed junctions or may employ dopantsegregation techniques, such as those utilized to form DSS Schottkytransistors.

Some 3D device flows presented herein suggest the use of the ELTRAN ormodified ELTRAN techniques and in other time a flow is presented usingthe ion-cut technique. It would be obvious for someone skilled in theart to suggest an alternative process flow by exchanging one layertransfer technique with another. Just as in some steps one couldexchange these layer transfer techniques with others presented herein orin other publication such as the bonding of SOI wafer and etch back.These would be variations for the described and illustrated 3D processflows presented herein.

In various places here or in the incorporated by reference disclosuresof heat removal techniques have been presented and illustrated. It wouldbe obvious to person skilled in the art to apply these techniques to anyof the other variations of 3D devices presented herein.

In various places here or in the incorporated by reference disclosuresof repair and redundancy techniques have been presented and illustrated.It would be obvious to person skilled in the art to apply thesetechniques to any of the other variations of 3D devices presentedherein.

In various places here or in the incorporated by reference disclosuresmemories and other circuit and techniques of customizing and integratingthese structures have been presented and illustrated. It would beobvious to person skilled in the art to apply these techniques andstructures to any of the other variations of 3D devices presentedherein.

It should be noted that one of the design requirements for a monolithic3D IC design may be that substantially all of the stacked layers and thebase or substrate would have their respective dice lines (may be calledscribe-lines) aligned. As the base wafer or substrate is processed andmultiple circuits may be constructed on semiconductor layers thatoverlay each other, the overall device may be designed wherein eachoverlaying layer would have its respective dice lines overlying the dicelines of the layer underneath, thus at the end of processing the entirelayer stacked wafer/substrate could be diced in a single dicing step.There may be test structures in the streets between dice lines, whichoverall may be called scribe-lanes or dice-lanes. These scribe-lanes ordice-lanes may be 10 um wide, 20 um wide, 50 um wide 100 um wide, orgreater than 100 um wide depending on design choice and die singulationprocess capability. The scribe-lanes or dice-lanes may includeguard-ring structures and/or other die border structures. In amonolithic 3D design each layer test structure could be connectedthrough each of the overlying layers and then to the top surface toallow access to these ‘buried’ test structure before dicing the wafer.Accordingly the design may include these vertical connections and mayoffset the layer test structures to enable such connection. In manycases the die borders comprise a protection structure, such as, forexample, a guard-ring structure, die seal structure, ESD structure, andothers elements. Accordingly in a monolithic 3D device these structures,such as guard rings, would be designed to overlay each other and may bealigned to each other during the course of processing. The die edges maybe sealed by a process and structure such as, for example, described inrelation to FIG. 183C of incorporated U.S. Pat. No. 8,273,610, and mayinclude aspects as described in relation to FIGS. 183A and 183B of samereference. One skilled in the art would recognize that the die seal canbe passive or electrically active. On each 3D stack layer, or stratum,the electronic circuits within one die, that may be circumscribed by adice-lane, may not be connected to the electronic circuits of a seconddie on that same wafer, that second die also may be circumscribed by adice-lane. Further, the dice-lane/scribe-lane of one stratum in the 3Dstack may be aligned to the dice-lane/scribe-lane of another stratum inthe 3D stack, thus providing a direct die singulation vector for the 3Dstack of strata/layers.

It will also be appreciated by persons of ordinary skill in the art thatthe invention is not limited to what has been particularly shown anddescribed hereinabove. For example, drawings or illustrations may notshow n or p wells for clarity in illustration. Moreover, transistorchannels illustrated or discussed herein may include dopedsemiconductors, but may instead include undoped semiconductor material.Further, any transferred layer or donor substrate or wafer preparationillustrated or discussed herein may include one or more undoped regionsor layers of semiconductor material. Rather, the scope of the inventionincludes both combinations and sub-combinations of the various featuresdescribed hereinabove as well as modifications and variations whichwould occur to such skilled persons upon reading the foregoingdescription. Thus the invention is to be limited only by the appendedclaims.

We claim:
 1. A 3D semiconductor device, the device comprising: a firstsingle crystal layer comprising a plurality of first transistors; atleast one metal layer interconnecting said first transistors, a portionof said first transistors forming a plurality of logic gates; aplurality of through silicon vias (TSVs); at least one connection fromsaid plurality of first transistors to a plurality of through siliconvias (TSVs); a plurality of second transistors overlaying said at leastone metal layer; a plurality of third transistors overlaying saidplurality of second transistors, wherein said plurality of secondtransistors are self-aligned to said plurality of third transistorshaving been processed following the same lithography step; and a firstmemory array and a second memory array, wherein said first memory arraycomprises said plurality of second transistors and said second memoryarray comprises said plurality of third transistors, wherein at leastone of said plurality of second transistors comprises a polysiliconchannel, wherein at least one of said plurality of second transistors isjunction-less transistor, wherein each of said plurality of secondtransistors comprises a gate, and wherein formation of said gatecomprises Atomic Layer Deposition (ALD).
 2. The 3D semiconductor deviceaccording to claim 1, further comprising: wherein at least one of saidthird transistors is a double gate transistor, and wherein each gate ofsaid double gate transistor is independently controlled.
 3. The 3Dsemiconductor device according to claim 1, further comprising: a NANDtype flash memory comprising said first memory array.
 4. The 3Dsemiconductor device according to claim 1, further comprising: a topmetal layer overlaying said plurality of third transistors; and aplurality of fourth transistors overlaying said top metal, wherein asubset of said plurality of first transistors are part of peripheralcircuit controlling said first memory array.
 5. The 3D semiconductordevice according to claim 1, wherein each of said plurality of secondtransistors comprises a gate dielectric, and wherein said gatedielectric comprises a low temperature microwave plasma oxide.
 6. The 3Dsemiconductor device according to claim 1, wherein at least one of saidfirst transistors is of the dopant segregated schottky barrier type. 7.The 3D semiconductor device according to claim 1, wherein at least oneof said plurality of second transistors directly overlays at least oneof said TSVs.
 8. A 3D semiconductor device, the device comprising: afirst single crystal layer comprising a plurality of first transistors;at least one metal layer interconnecting said first transistors, aportion of said first transistors forming a plurality of logic gates; aplurality of through silicon vias (TSVs); at least one connection fromsaid plurality of first transistors to a plurality of through siliconvias (TSVs); a plurality of second transistors overlaying said at leastone metal layer; a plurality of third transistors overlaying saidplurality of second transistors, wherein said plurality of secondtransistors are self-aligned to said plurality of third transistorshaving been processed following the same lithography step; and a firstmemory array and a second memory array, wherein said first memory arraycomprises said plurality of second transistors and said second memoryarray comprises said plurality of third transistors, wherein at leastone of said plurality of second transistors comprises a polysiliconchannel, and wherein at least one of said plurality of secondtransistors is junction-less transistor.
 9. The 3D semiconductor deviceaccording to claim 8, wherein at least one of said second transistors isa double gate transistor, and wherein each gate of said double gatetransistor is independently controlled.
 10. The 3D semiconductor deviceaccording to claim 8, wherein at least one of said first transistors isof the dopant segregated schottky barrier type.
 11. The 3D semiconductordevice according to claim 8, further comprising: a NAND type flashmemory comprising said first memory array.
 12. The 3D semiconductordevice according to claim 8, further comprising: a top metal layeroverlaying said plurality of third transistors; and a plurality offourth transistors overlaying said top metal, wherein a subset of saidplurality of first transistors are part of peripheral circuitcontrolling said first memory array.
 13. The 3D semiconductor deviceaccording to claim 8, wherein said plurality of fourth transistors arepart of a memory periphery circuit.
 14. A 3D semiconductor device, thedevice comprising: a first single crystal layer comprising a pluralityof first transistors; at least one metal layer interconnecting saidfirst transistors, a portion of said first transistors forming aplurality of logic gates; a plurality of through silicon vias (TSVs); atleast one connection from said plurality of first transistors to aplurality of through silicon vias (TSVs); a plurality of secondtransistors overlaying said at least one metal layer; a plurality ofthird transistors overlaying said plurality of second transistors,wherein said plurality of second transistors are self-aligned to saidplurality of third transistors having been processed following the samelithography step; and a first memory array and a second memory array,wherein said first memory array comprises said plurality of secondtransistors and said second memory array comprises said plurality ofthird transistors.
 15. The 3D semiconductor device according to claim14, wherein at least one of said plurality of second transistorscomprises a polysilicon channel.
 16. The 3D semiconductor deviceaccording to claim 14, wherein at least one of said second transistorsis a double gate transistor, and wherein each gate of said double gatetransistor is independently controlled.
 17. The 3D semiconductor deviceaccording to claim 14, wherein at least one of said first transistors isof the dopant segregated schottky barrier type.
 18. The 3D semiconductordevice according to claim 14, wherein at least one of said plurality ofsecond transistors is a junction-less transistor.
 19. The 3Dsemiconductor device according to claim 14, further comprising: a NANDtype flash memory comprising said plurality of second transistors. 20.The 3D semiconductor device according to claim 14, further comprising: atop metal layer overlaying said plurality of third transistors; and aplurality of fourth transistors overlaying said top metal, wherein asubset of said plurality of first transistors are part of peripheralcircuit controlling said first memory array.